2MBI200UB-120 Fuji Electric holdings CO.,Ltd, 2MBI200UB-120 Datasheet

2MBI200UB-120

Manufacturer Part Number

2MBI200UB-120

Description

Manufacturer

Fuji Electric holdings CO.,Ltd

Datasheet

1.2MBI200UB-120.pdf (4 pages)

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2MBI200UB-120

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FUJI

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1 000

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HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

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2MBI200UB-120

IGBT Module U-Series

· High speed switching

· Voltage drive

· Low inductance module structure

Item

Collector-Emitter voltage

Gate-Emitter voltaga

Collector current

Collector Power Dissipation

Junction temperature

Storage temperature

Isolation voltage between terminal and copper base *1

Screw Torque

Item

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip*3

*3:Biggest internal terminal resistance among arm.

Thermal resistance

Contact Thermal resistance

Items

1 :

2 :

Thermal resistance characteristics

: This is the value which is defined mounting on the additional cooling fin with thermal compound.

Electrical characteristics (at Tj=25°C unless otherwise specified)

Recommendable value : Mounting 2.5 to 3.5 N·m(M5)

All terminals should be connected together when isolation test will be done.

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Features

Maximum ratings and characteristics

Symbols

(terminal)

(chip)

(terminal)

(chip)

R lead

Rth(j-c)

Rth(c-f)*

CES

GES

off

r(i)

GE(th)

CE(sat)

ies

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Industrial machines, such as Welding machines

Mounting *

Terminals *

Applications

Conditions

IGBT

FWD

With thermal compound

=200A

Conditions

=20V, I

=10V, V

=0V, V

=15V, I

=±15V

=0V

=600V

Symbol

-I

stg

CES

GES

iso

pulse

=200mA

=200A

=1200V

=±20V

=0V, f=1MHz

1200V / 200A 2 in one-package

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Conditions

Continuous

AC:1min.

1 device

1ms

Characteristics

Min.

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

–

4.5

–

Typ.

Equivalent Circuit Schematic

–

0.025

–

6.5

1.95

2.20

1.75

2.00

0.36

0.21

0.03

0.37

0.07

1.80

1.90

1.60

1.70

–

0.97

Rating

-40 to +125

1200

1040

+150

2500

±20

300

200

600

400

200

400

3.5

G1 E1

Max.

400

0.12

0.20

–

2.0

8.5

2.30

–

2.10

–

1.20

0.60

–

1.00

0.30

2.10

–

1.90

–

0.35

–

C2E1

Unit

°C

VAC

N·m

µs

°C/W

G2 E2

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2MBI200UB-120 Summary of contents

Page 1

... IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Collector Power Dissipation Junction temperature ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 500 VGE=20V 15V 12V 400 300 200 100 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 500 T j=25°C 400 300 200 100 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V Hz, Tj= 25° ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω, Tj= 25°C 10000 1000 100 10 0 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C 10000 1000 tr 100 10 1.0 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=± ...

Page 4

... Forward current vs. Forward on voltage (typ.) 500 Tj=25°C 400 300 200 100 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [ sec ] Outline Drawings, mm M233 chip 1000 Tj=125°C 100 FWD IGBT 0.100 1.000 IGBT Module Reverse recovery characteristics (typ.) Vcc=600V, VGE=± ...

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