MG400J2YS60A

Manufacturer Part NumberMG400J2YS60A
DescriptionTOSHIBA IGBT Module Silicon N Channel IGBT
ManufacturerTOSHIBA Semiconductor CORPORATION
MG400J2YS60A datasheet
 


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CE GE G

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I
– V
F
F
800
Common cathode
V GE = 0 V
600
T j = 25°C
400
200
125°C
-40°C
0
0
0.5
1
1.5
2
Forward voltage V
(V)
F
SW time – R
G
10000
Common emitter, V CC = 300 V
I C = 400 A
T j = 25°C
V GE = ±15 V
T j = 125°C
t off
1000
t d (off)
t f
100
0
5
10
15
Gate resistance R
(9)
G
SW time – I
C
10000
Common emitter
V CC = 300 V
R G = 7.5 W
V GE = ±15 V
t off
1000
t d (off)
t on
t d (on)
t f
t r
100
0
100
200
300
Collector current I
(A)
C
500
Common emitter
R L = 0.75 W
T j = 25°C
400
300
200
100
0
2.5
3
0
100
t on
t d (on)
t r
10
20
25
0
100
T j = 25°C
T j = 125°C
10
1
400
0
7
MG400J2YS60A
V
, V
– Q
CE
GE
G
20
16
12
600 V
200 V
VCE = 0 V
8
400 V
4
0
1000
2000
3000
4000
Charge Q
(nC)
G
E
, E
– R
on
off
G
E on
E off
Common emitter
V CC = 300 V
I C = 400 A
T j = 25°C
V GE = ±15 V
T j = 125°C
5
10
15
20
25
Gate resistance R
(9)
G
E
, E
– I
on
off
C
E on
E off
Common emitter
V CC = 300 V
R G = 7.5 W
T j = 25°C
V GE = ±15 V
T j = 125°C
100
200
300
400
Collector current I
(A)
C
2002-09-06