1MBI400NA-120 Fuji Electric holdings CO.,Ltd, 1MBI400NA-120 Datasheet
1MBI400NA-120
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1MBI400NA-120 Summary of contents
Page 1
IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current ...
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Collector current vs. Collector-Emitter voltage T =25°C j 1000 V =20V, 15V, 12V, 10V GE 800 600 400 200 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage T =25° ...
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Switching time vs =600V, I =400A, V =±15V 1000 100 1 Gate resistance : R Forward current vs. Forward voltage V =OV GE 1000 T =125°C 25°C j 800 600 400 200 0 0 ...
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Switching loss vs. Collector current V =600V 175 150 125 100 100 200 300 400 Collector Current : I Fuji Electric GmbH Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 ...