2MBI200NE-120 Fuji Electric holdings CO.,Ltd, 2MBI200NE-120 Datasheet
2MBI200NE-120
Manufacturer Part Number
2MBI200NE-120
Description
IGBT MODULE ( N series )
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2MBI200NE-120.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IGBT MODULE ( N series )
n n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5 Times Rated Current)
n n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n n Maximum Ratings and Characteristics
•
•
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
•
Thermal Resistance
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
Items
Items
Items
Continuous
1ms
Continuous
1ms
A.C. 1min.
( at T
( T
j
=25°C )
c
=25°C
Note: *1:Recommendable Value; 2.5
Mounting *1
Terminals *2
Symbols
V
V
I
I
-I
-I
P
T
T
V
)
I
I
V
V
C
C
C
t
t
t
t
V
t
Symbols
Symbols
C
C PULSE
CES
GES
ON
r
OFF
f
rr
CES
GES
C
C PULSE
C
j
stg
is
*2:Recommendable Value; 3.5
GE(th)
CE(sat)
F
ies
oes
res
R
R
R
th(c-f)
th(j-c)
th(j-c)
-40
Ratings
1200
1500
+150
2500
IGBT
Diode
With Thermal Compound
200
400
200
400
3.5
4.5
20
V
V
V
V
V
V
f=1MHz
V
I
V
R
I
I
C
F
F
+125
GE
CE
GE
GE
GE
CE
CC
GE
=200A V
=200A
=200A
G
3.5 Nm (M5) or (M6)
4.5 Nm (M6)
=4.7
=0V V
=10V
=0V V
=20V I
=15V I
=0V
=600V
= 15V
Test Conditions
Test Conditions
CE
GE
C
C
GE
Units
=200mA
=200A
°C
°C
n n Outline Drawing
W
=1200V
= 20V
=0V
Nm
V
V
V
A
n n Equivalent Circuit
Min.
Min.
4.5
32000
11600
10320
0.025
Typ.
Typ.
0.65
0.25
0.85
0.35
0.085
0.22
Max.
Max.
350
2.0
7.5
3.3
1.2
0.6
1.5
0.5
3.0
30
Units
Units
°C/W
mA
µA
pF
ns
V
V
V
µs
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2MBI200NE-120 Summary of contents
Page 1
IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current ...
Page 2
Collector current vs. Collector-Emitter voltage T =25°C j 500 V =20V,15V,12V,10V GE 400 300 200 100 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage T =25° ...
Page 3
Switching time vs =600V, I =200A, V =±15V 1000 100 10 Gate resistance : R Forward current vs. Forward voltage 500 T =125°C 25°C j 400 300 200 100 ...
Page 4
Switching loss vs. Collector current V =600V 100 200 Collector Current : I Fuji Electric GmbH Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 ...