1MBI600PX-120 Fuji Electric holdings CO.,Ltd, 1MBI600PX-120 Datasheet
1MBI600PX-120
Manufacturer Part Number
1MBI600PX-120
Description
IGBT MODULE
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.1MBI600PX-120.pdf
(5 pages)
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Part Number:
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Part Number:
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Manufacturer:
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Quantity:
1 000
IGBT MODULE
n n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
n n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n n Maximum Ratings and Characteristics
•
•
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
•
Thermal Resistance
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
Items
Continuous (25°C / 80°C)
1ms (25°C / 80°C)
Continuous
1ms
Items
Items
A.C. 1min.
( at T
( T
j
=25°C )
c
=25°C
Note: *1:Recommendable Value; 4.0 ± 0.5 Nm (M6)
Terminals *2
Terminals *3
Mounting *1
-I
-I
)
Symbols
V
V
I
I
P
T
T
V
I
I
V
V
C
C
C
t
t
t
t
V
t
Symbols
Symbols
C
C PULSE
C
C PULSE
CES
GES
ON
r
OFF
f
rr
j
stg
CES
GES
C
is
*2:Recommendable Value; 10.0 ± 1.0 Nm (M8)
*3:Recommendable Value; 1.5 ± 0.2 Nm (M4)
GE(th)
CE(sat)
F
ies
oes
res
R
R
R
th(j-c)
th(j-c)
th(c-f)
1600 / 1200
-40
800 / 600
Ratings
IGBT
Diode
With Thermal Compound
1200
1200
4100
+150
2500
11.0
V
V
V
V
V
V
f=1MHz
V
I
V
R
I
I
600
C
F
F
4.5
1.7
+125
20
GE
CE
GE
GE
GE
CE
CC
GE
=600A V
=600A, V
G
=600A
=2.0
Test Conditions
=0V V
=10V
Test Conditions
=0V V
=20V I
=15V I
=0V
=600V
= 15V
n n Outline Drawing
GE
CE
Units
GE
C
C
GE
°C
°C
W
=600mA
=600A
Nm
V
V
V
=1200V
= 20V
A
=0V
=-15V
n n Equivalent Circuit
Min.
Min.
7.0
0.0063
Typ.
Typ.
2.85
0.75
0.02
0.65
0.01
60
8.0
9
4
Max.
Max.
0.03
0.06
1.20
0.60
1.00
0.30
3.4
350
2.0
0.5
9.0
3.2
Units
Units
°C/W
mA
µA
nF
ns
V
V
µs
V
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1MBI600PX-120 Summary of contents
Page 1
IGBT MODULE n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance n n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor ...
Page 2
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Page 5
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com ...