MG100Q2YS65H

Manufacturer Part NumberMG100Q2YS65H
DescriptionToshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
ManufacturerTOSHIBA Semiconductor CORPORATION
MG100Q2YS65H datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 4/6:

Switching time I

Download datasheet (151Kb)Embed
PrevNext
Switching time – I
C
1
Common emitter
: Tc = 25°C
V CC = 600 V
: Tc = 125°C
V GE = ±15 V
R G = 9.1 W
t on
0.1
t r
t d (on)
0.01
10
30
Collector current I
(A)
C
Switching time – R
G
1
: Tc = 25°C
: Tc = 125°C
0.1
Common emitter
V CC = 600 V
I C = 100 A
V GE = ±15 V
0.01
0
10
20
30
40
Gate resistance R
(9)
G
Switching loss – I
C
100
Common emitter
: Tc = 25°C
V CC = 600 V
: Tc = 125°C
V GE = ±15 V
R G = 9.1 W
10
E on
E off
1
E dsw
0.1
1
10
Collector current I
(A)
C
1
0.1
Common emitter
V CC = 600 V
V GE = ±15 V
R G = 9.1 W
0.01
100
10
10
Common emitter
V CC = 600 V
I C = 100 A
V GE = ±15 V
t on
1
t off
t d (on)
t r
t d (off)
0.1
0.01
50
60
0
10
100
Common emitter
V CC = 600 V
I C = 100 A
V GE = ±15 V
10
: Tc = 25°C
: Tc = 125°C
1
100
1
4
MG100Q2YS65H
Switching time – I
C
t d (off)
t off
t f
: Tc = 25°C
: Tc = 125°C
30
100
Collector current I
(A)
C
Switching time – R
G
: Tc = 25°C
: Tc = 125°C
t f
20
30
40
50
60
Gate resistance R
(9)
G
Switching loss – R
G
E on
E off
E dsw
10
100
Gate resistance R
(9)
G
2002-10-04