BF961 Vishay Semiconductors, BF961 Datasheet

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BF961

Manufacturer Part Number
BF961
Description
N-Channel depletion mode dual-gate Si-MOSFET RF transistor
Manufacturer
Vishay Semiconductors
Datasheet

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N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
BF961 Marking: BF961
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
Absolute Maximum Ratings
T
Maximum Thermal Resistance
T
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm
Document Number 85002
Rev. 3, 20-Jan-99
D
D
D
amb
amb
2
94 9307
Integrated gate protection diodes
High cross modulation performance
Low noise figure
Parameter
= 25
= 25
3
_
_
C, unless otherwise specified
C, unless otherwise specified
1
Parameter
4
plated with 35
96 12647
m
m Cu
Test Conditions
Test Conditions
T
amb
60 ° C
G
G
12623
D
D
D
Electrostatic sensitive device.
Observe precautions for handling.
2
1
High AGC-range
Low feedback capacitance
Low input capacitance
Type
3
Symbol
R
Vishay Semiconductors
Symbol
I
thChA
G1/G2SM
V
T
P
T
I
stg
DS
Ch
D
tot
–55 to +150
Value
450
Value
200
150
20
30
10
www.vishay.com
BF961
D
S
Unit
mW
Unit
K/W
mA
mA
° C
° C
V
1 (7)

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BF961 Summary of contents

Page 1

... D Integrated gate protection diodes D High cross modulation performance D Low noise figure 9307 96 12647 1 BF961 Marking: BF961 Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 Absolute Maximum Ratings unless otherwise specified amb Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current ...

Page 2

... Type = – G1S G2S = G2S G1S G2S G1S BF961 G1S G1S G2S G2S BF961A BF961B –V G2S –V G1S unless otherwise specified amb Test Conditions = 4 V G2S = 0.5 mS 200 MHz L = 0.5 mS 200 MHz L Symbol Min Typ Max Unit (BR)DS ...

Page 3

... Figure 5. Gate 1 Input Capacitance vs. 4.0 3.6 =0.5V 3.2 2.8 0V 2.4 2.0 1.6 1.2 –0.5V 0.8 0 –2 –1 96 12164 Figure 6. Gate 2 Input Capacitance vs. BF961 Vishay Semiconductors =15V V =5V G2S – Gate 1 Source Voltage ( V ) G1S Gate 1 Source Voltage V =15V DS V =4V G2S f=1MHz V – ...

Page 4

... BF961 Vishay Semiconductors 3.0 V =4V G2S 2.5 f=1MHz 2.0 1.5 1.0 0 – Drain Source Voltage ( 12165 DS Figure 7. Output Capacitance vs. Drain Source Voltage 18 f=700MHz 16 600MHz 14 12 500MHz 10 400MHz 8 300MHz 6 V =15V DS V 200MHz G2S 4 I =5...20mA D 2 f=50...700MHz 100MHz 12166 11 Figure 8. Short Circuit Input Admittance www ...

Page 5

... Figure 13. Reverse transmission coefficient j0.5 30 j0 20mA D 10mA –j0.2 –30 5mA –30 –j0.5 –60 12 923 Figure 14. Output reflection coefficient BF961 Vishay Semiconductors 300 600 0.04 0.08 0 –30 –60 – 0 100 300 500 –j5 700 MHz –j2 – ...

Page 6

... BF961 Vishay Semiconductors Dimensions in mm www.vishay.com 6 (7) 96 12242 Document Number 85002 Rev. 3, 20-Jan-99 ...

Page 7

... Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone 7131 67 2831, Fax number 7131 67 2423 Document Number 85002 Rev. 3, 20-Jan-99 BF961 Vishay Semiconductors www.vishay.com 7 (7) ...

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