IDT6116LA45DB Integrated Device Technology, Inc., IDT6116LA45DB Datasheet

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IDT6116LA45DB

Manufacturer Part Number
IDT6116LA45DB
Description
CMOS static RAM 16K (2K x 8 bit)
Manufacturer
Integrated Device Technology, Inc.
Datasheet

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FEATURES:
• High-speed access and chip select times
• Low-power consumption
• Battery backup operation
• Produced with advanced CMOS high-performance
• CMOS process virtually eliminates alpha particle
• Input and output directly TTL-compatible
• Static operation: no clocks or refresh required
• Available in ceramic and plastic 24-pin DIP, 24-pin Thin
• Military product compliant to MIL-STD-833, Class B
The IDT logo is aregistered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
FUNCTIONAL BLOCK DIAGRAM
I/O
I/O
1996 Integrated Device Technology, Inc.
A
A
WE
CS
OE
— Military: 20/25/35/45/55/70/90/120/150ns (max.)
— Commercial: 15/20/25/35/45ns (max.)
— 2V data retention voltage (LA version only)
technology
soft-error rates
Dip and 24-pin SOIC and 24-pin SOJ
Integrated Device Technology, Inc.
10
0
0
7
CONTROL
CIRCUIT
DECODER
ADDRESS
CIRCUIT
INPUT
DATA
CMOS STATIC RAM
16K (2K x 8 BIT)
5.1
DESCRIPTION:
organized as 2K x 8. It is fabricated using IDT's high-perfor-
mance, high-reliability CMOS technology.
offers a reduced power standby mode. When
the circuit will automatically go to, and remain in, a standby
power mode, as long as
provides significant system level power and cooling savings.
The low-power (LA) version also offers a battery backup data
retention capability where the circuit typically consumes only
1 W to 4 W operating off a 2V battery.
compatible. Fully static asynchronous circuitry is used, requir-
ing no clocks or refreshing for operation.
plastic or ceramic DIP and a 24-lead gull-wing SOIC, and a 24
-lead J-bend SOJ providing high board-level packing densi-
ties.
latest version of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
Access times as fast as 15ns are available. The circuit also
All inputs and outputs of the IDT6116SA/LA are TTL-
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil
Military grade product is manufactured in compliance to the
I/O CONTROL
128 X 128
MEMORY
ARRAY
CS
remains HIGH. This capability
IDT6116SA
IDT6116LA
CS
MARCH 1996
goes HIGH,
V
3089 drw 01
GND
CC
3089/1
1

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IDT6116LA45DB Summary of contents

Page 1

... I CONTROL OE CIRCUIT WE The IDT logo is aregistered trademark of Integrated Device Technology, Inc. MILITARY AND COMMERCIAL TEMPERATURE RANGES 1996 Integrated Device Technology, Inc. For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391. CMOS STATIC RAM 16K ( BIT) DESCRIPTION: The IDT6116SA/ 16,384-bit high-speed static RAM organized ...

Page 2

IDT6116SA/LA CMOS STATIC RAM 16K (2K x 8-BIT) PIN CONFIGURATIONS P24 P24 D24 D24 SO24 & ...

Page 3

IDT6116SA/LA CMOS STATIC RAM 16K (2K x 8-BIT) RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Ambient Grade Temperature Military – +125 C Commercial + ELECTRICAL CHARACTERISTICS V = 5.0V 10% CC Symbol Parameter |I ...

Page 4

IDT6116SA/LA CMOS STATIC RAM 16K (2K x 8-BIT) DC ELECTRICAL CHARACTERISTICS V = 5.0V 10 0.2V Symbol Parameter Power I Operating Power Supply SA CC1 Current Outputs Open ...

Page 5

IDT6116SA/LA CMOS STATIC RAM 16K (2K x 8-BIT) LOW V DATA RETENTION WAVEFORM 4.5V t CDR TEST CONDITIONS Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test ...

Page 6

IDT6116SA/LA CMOS STATIC RAM 16K (2K x 8-BIT) AC ELECTRICAL CHARACTERISTICS Symbol Parameter READ CYCLE t Read Cycle Time RC t Address Access Time AA t Chip Select Access Time ACS (3) t Chip Select to Output in CLZ Low-Z ...

Page 7

IDT6116SA/LA CMOS STATIC RAM 16K (2K x 8-BIT) TIMING WAVEFORM OF READ CYCLE NO. 1 ADDRESS OE CS DATA OUT Supply Currents I SB TIMING WAVEFORM OF READ CYCLE NO. 2 ADDRESS DATA PREVIOUS DATA VALID ...

Page 8

IDT6116SA/LA CMOS STATIC RAM 16K (2K x 8-BIT) AC ELECTRICAL CHARACTERISTICS Symbol Parameter WRITE CYCLE t Write Cycle Time WC t Chip Select to End-of- CW Write t Address Valid to End- AW of-Write t Address Set-up Time AS t ...

Page 9

IDT6116SA/LA CMOS STATIC RAM 16K (2K x 8-BIT) TIMING WAVEFORM OF WRITE CYCLE NO ADDRESS DATA OUT PREVIOUS DATA VALID DATA IN TIMING WAVEFORM OF WRITE CYCLE NO ADDRESS CS WE DATA IN ...

Page 10

IDT6116SA/LA CMOS STATIC RAM 16K (2K x 8-BIT) ORDERING INFORMATION IDT 6116 XX XXX Device Type Power Speed X X Package Process/ Temperature Range Blank ...

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