HY57V161610FTP-7 Hynix Semiconductor, HY57V161610FTP-7 Datasheet

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HY57V161610FTP-7

Manufacturer Part Number
HY57V161610FTP-7
Description
Manufacturer
Hynix Semiconductor
Datasheet

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This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 1.0 / Apr. 2006
Document Title
2Bank x 512K x 16bits Synchronous DRAM
Revision History
16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O
Revision No.
0.1
1.0
Final Revision
Initial Draft
History
Draft Date
Feb. 2006
Apr. 2006
Preliminary
Remark
1

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HY57V161610FTP-7 Summary of contents

Page 1

Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 This document is a general product description and is subject to change without notice. Hynix ...

Page 2

... Clock Frequency HY57V161610FT(P)-5(I) HY57V161610FT(P)-6(I) HY57V161610FT(P)-7(I) HY57V161610FT(P)-H(I) Note: 1. HY57V161610FTP Series: Lead free, commercial temperature(0 2. HY57V161610FT Series: Leaded, commercial temperature(0 3.HY57V161610FTP-xxI Series: Lead free, Industrial temperature(-40 4.HY57V161610FT-xxI Series: Leaded, Industrial temperature(-40 Rev. 1.0 / Apr. 2006 Synchronous DRAM Memory 16Mbit (1Mx16bit) • ...

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PIN CONFIGURATION V DD DQ0 DQ1 VSSQ DQ2 DQ3 VDDQ DQ4 DQ5 VSSQ DQ6 DQ7 VDDQ LDQM /WE /CAS /RAS /CS BA A10 VDD Rev. 1.0 / Apr. 2006 Synchronous DRAM Memory 16Mbit (1Mx16bit ...

Page 4

PIN DESCRIPTION SYMBOL TYPE CLK INPUT CKE INPUT CS INPUT BA INPUT A0 ~ A10 INPUT RAS, CAS, WE INPUT UDQM, LDQM INPUT DQ0 ~ DQ15 I SUPPLY SUPPLY DDQ SSQ NC - Rev. ...

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FUNCTIONAL BLOCK DIAGRAM 512K x 2Banks x 16 I/O Synchronous DRAM Self Refresh Counter Refresh Interval Timer Address[0:10] CLK Precharge CKE Row Active BA(A11) Column Active CS RAS Burst Length CAS WE UDQM LDQM Mode Register Rev. 1.0 / Apr. ...

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BASIC FUNCTIONAL DESCRIPTION Mode Register BA A10 A9 Bank 0 OP Code Address OP Code CAS Latency CAS Latency Reserved ...

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... Voltage on VDD supply relative to VSS Short Circuit Output Current Power Dissipation . Soldering Temperature Time Note: 1. HY57V161610FTP Series: Lead free, commercial temperature(0 2. HY57V161610FT Series: Leaded, commercial temperature(0 3.HY57V161610FTP-xxI Series: Lead free, Industrial temperature(-40 4.HY57V161610FT-xxI Series: Leaded, Industrial temperature(-40 DC OPERATING CONDITION Parameter ...

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CAPACITANCE ( Parameter Input capacitance Data input / output capacitance OUTPUT LOAD CIRCUIT Vtt=1.4V RT=250 Ω Output 30pF DC Output Load Circuit DC CHARACTERRISTICS I Parameter Power Supply Voltage Input Leakage Current Output Leakage Current Output ...

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DC CHARACTERISTICS II Parameter Symbol Operating IDD1 Current Precharge IDD2P Standby Current in power down IDD2PS mode Precharge IDD2N Standby Current in non power down mode IDD2NS Active Standby IDD3P Current in power down IDD3PS mode Active Standby IDD3N Current ...

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AC CHARACTERISTICS I Parameter System Clock Cycle Time Clock High Pulse Width Clock Low Pulse Width Access Time From Clock Data-out Hold Time Data-Input Setup Time Data-Input Hold ...

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AC CHARACTERISTICS II Sym- Parameter RAS Cycle Time Operation t RC Auto RAS Cycle Time t RRC Refresh RAS to CAS Delay t RCD RAS Active Time t RAS RAS Precharge Time t RP RAS to RAS Bank Active De- ...

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COMMAND TRUTH TABLE Command CKEn-1 CKEn Mode Register Set H No Operation H Bank Active H Read H Read with Autopre- charge Write H Write with Autopre- charge Precharge All Banks H Precharge selected Bank Burst Stop H DQM H ...

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PACKAGE INFORMATION 400mil 50pin Thin Small Outline Package (TC) 1Mx16 Synchronous DRAM 1.2(0.0472) 1.0(0.0394) 0.646 REF GAGE PLANE 0~5deg Rev. 1.0 / Apr. 2006 Synchronous DRAM Memory 16Mbit (1Mx16bit) HY57V161610FT(P)-xx(I) Series 10.262(0.4040) 10.059(0.3960) 0.45(0.0177) 0.8(0.0315 BSC) 0.30(0.0118) 21.057(0.8290) 20.879(0.8220) 0.210(0.0083) ...

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