MRF2628

Manufacturer Part NumberMRF2628
DescriptionNPN silicon RF power transistor
ManufacturerMotorola
MRF2628 datasheet
 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for 12.5 volt VHF large–signal power amplifiers in commercial and
industrial FM equipment.
Compact .280 Stud Package
Specified 12.5 V, 175 MHz Performance
Output Power = 15 Watts
Power Gain = 12 dB Min
Efficiency = 60% Min
Characterized to 220 MHz
Load Mismatch Capability at High Line and Overdrive
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T A = 25 C
Derate above 25 C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
(T C = 25 C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 25 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
(I C = 25 mAdc, V BE = 0)
Emitter–Base Breakdown Voltage
(I E = 5.0 mAdc, I C = 0)
Collector Cutoff Current
(V CB = 15 Vdc, I E = 0)
REV 6
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF2628
15 W 136 – 220 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 244–04, STYLE 1
Symbol
Value
V CEO
18
V CBO
36
V EBO
4.0
I C
2.5
P D
40
0.23
T stg
– 65 to +150
T J
200
Symbol
Max
R JC
4.0
Symbol
Min
Typ
V (BR)CEO
18
V (BR)CES
36
V (BR)EBO
4.0
I CBO
Order this document
by MRF2628/D
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/ C
C
C
Unit
C/W
Max
Unit
Vdc
Vdc
Vdc
1.0
mAdc
(continued)
MRF2628
1

MRF2628 Summary of contents