1MBH05D-120 Fuji Electric holdings CO.,Ltd, 1MBH05D-120 Datasheet
1MBH05D-120
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1MBH05D-120 Summary of contents
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... Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · ...
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... Characteristics Collector current vs. Collector-Emitter voltage Tj=25°C Collector-Emitter voltage : V Collector-Emitter voltage vs. Gate-Emitter voltage Tj=25°C Gate-Emitter voltage : V Switching time vs. Collector current V =600V Collector current : I Collector current vs. Collector-Emitter voltage Tj=125°C (V) CE Collector-Emitter voltage vs. Gate-Emitter voltage Tj=125°C (V) GE =±15V, Tj=25°C ...
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... Characteristics Switching time vs =600V, I =5A 15V, Tj=25° Gate resistance : R Dynamic input characteristics Tj=25°C Gate charge : Qg (nc) Reverse Biased Safe Operating Area = < = < +V =15V, -V 15V, Tj 125° Collector-Emitter voltage : V Switching time vs Capacitance vs. Collector-Emitter voltage Tj=25°C Typical short circuit capability = > ...
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... Characteristics Reverse recovery time vs. Forward current V =200V, -di/dt=100A/µsec R Forward current : I Forward Voltage vs. Forward Current Forward voltage : V Transient thermal resistance Pulse width : P Reverse recovery current vs. Forward current V R (A) F (V) F (sec) W IGBT Module =200V, -di/dt=100A/µsec Forward current : I (A) F Reverse recovery chracteristics vs. -di/dt I =5A, Tj=125° ...