IRF7104TR International Rectifier Corp., IRF7104TR Datasheet

no-image

IRF7104TR

Manufacturer Part Number
IRF7104TR
Description
Manufacturer
International Rectifier Corp.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7104TR
Quantity:
3 886
Part Number:
IRF7104TRPBF
Manufacturer:
IR
Quantity:
15 600
Part Number:
IRF7104TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7104TRPBF
Quantity:
4 800
Company:
Part Number:
IRF7104TRPBF
Quantity:
10 420
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications.
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Description
Absolute Maximum Ratings
Thermal Resistance Ratings
I
I
I
P
V
dv/dt
T
D
D
DM
J,
R
D
GS
@ T
@ T
T
@T
Adavanced Process Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
JA
STG
A
A
C
= 25°C
= 70°C
= 25°C
With these improvements, multiple
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G 2
G 1
S 2
S 1
1
2
3
4
Top View
Min.
–––
HEXFET
8
6
5
7
-55 to + 150
Max.
0.016
± 12
D 1
-2.3
-1.8
-3.0
D 1
D 2
D 2
-10
2.0
Typ.
S O -8
–––
®
R
IRF7104
Power MOSFET
DS(on)
V
I
DSS
D
PD - 9.1096B
= -2.3A
Max.
62.5
= 0.250
= -20V
Units
Units
°C/W
W/°C
V/nS
°C
W
A
V
8/25/97

Related parts for IRF7104TR

IRF7104TR Summary of contents

Page 1

Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon ...

Page 2

IRF7104 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

Drain-to-Source Voltage ( Fig 1. Typical Output Characteristics -V , Gate-to-Source Voltage ( Fig 3. Typical Transfer Characteristics IRF7104 -V , Drain-to-Source Voltage ( Fig 2. Typical Output Characteristics ...

Page 4

IRF7104 -V , Drain-to-Source Voltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage -V , Source-to-Drain Voltage ( Fig 7. Typical Source-Drain Diode Forward Voltage SEE FIGURE Total Gate Charge ( ...

Page 5

T , Ambient Temperature ( ° Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal ...

Page 6

IRF7104 Q G -10V Charge Fig 12a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. -3mA I G Current Sampling Resistors Fig 12b. ...

Page 7

Peak Diode Recovery dv/dt Test Circuit * D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Body ...

Page 8

IRF7104 Package Outline SO8 Outline 0.25 (.010 0.25 (.010) ...

Page 9

Tape & Reel Information SO8 Dimensions are shown in millimeters (inches TRO SIO ...

Related keywords