MP4104 | |
|---|---|
| Manufacturer Part Number | MP4104 |
| Manufacturer | TOSHIBA Semiconductor CORPORATION |
| MP4104 datasheet |
|
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
•
Small package by full molding (SIP 10 pins)
•
High collector power dissipation (4-device operation)
: P
= 4 W (Ta = 25°C)
T
•
High collector current: I
C (DC)
•
High DC current gain: h
= 2000 (min) (V
FE
Absolute Maximum Ratings
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulse
Continuous base current
Collector power dissipation
(1-device operation)
Collector power dissipation
(4-device operation)
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
3
5
4
6
2
1
R1 R2
R1 ≈ 4.5 kΩ
(Four Darlington Power Transistors in One)
MP4104
= 4 A (max)
= 2 V, I
= 1.5 A)
CE
C
(Ta = 25°C)
Symbol
Rating
V
120
CBO
V
100
CEO
V
6
EBO
I
4
C
I
6
CP
I
0.5
B
P
2.0
C
P
4.0
T
T
150
j
T
−55 to 150
stg
7
9
8
10
R2 ≈ 300 Ω
1
Industrial Applications
Unit
V
V
V
JEDEC
―
A
JEITA
―
TOSHIBA
2-25A1A
A
Weight: 2.1 g (typ.)
W
W
°C
°C
2006-10-27
MP4104
Unit: mm
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MP4104 Summary of contents |
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