MP4104

Manufacturer Part NumberMP4104
ManufacturerTOSHIBA Semiconductor CORPORATION
MP4104 datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
Page 1/5

Download datasheet (148Kb)Embed
Next
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
Small package by full molding (SIP 10 pins)
High collector power dissipation (4-device operation)
: P
= 4 W (Ta = 25°C)
T
High collector current: I
C (DC)
High DC current gain: h
= 2000 (min) (V
FE
Absolute Maximum Ratings
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulse
Continuous base current
Collector power dissipation
(1-device operation)
Collector power dissipation
(4-device operation)
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
3
5
4
6
2
1
R1 R2
R1 ≈ 4.5 kΩ
(Four Darlington Power Transistors in One)
MP4104
= 4 A (max)
= 2 V, I
= 1.5 A)
CE
C
(Ta = 25°C)
Symbol
Rating
V
120
CBO
V
100
CEO
V
6
EBO
I
4
C
I
6
CP
I
0.5
B
P
2.0
C
P
4.0
T
T
150
j
T
−55 to 150
stg
7
9
8
10
R2 ≈ 300 Ω
1
Industrial Applications
Unit
V
V
V
JEDEC
A
JEITA
TOSHIBA
2-25A1A
A
Weight: 2.1 g (typ.)
W
W
°C
°C
2006-10-27
MP4104
Unit: mm

MP4104 Summary of contents