SI7405DN-T1-E3 Vishay Semiconductors, SI7405DN-T1-E3 Datasheet

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... Bottom View Ordering Information: Si7405DN-T1 Si7405DN-T1–E3 (Lead (Pb)–free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

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... Si7405DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

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... Document Number: 71424 S-51210–Rev. C, 27-Jun- °C, unless otherwise noted 2 4 ° 0.8 1.0 1.2 Si7405DN Vishay Siliconix 6000 5000 C iss 4000 3000 2000 C oss 1000 C rss – Drain-to-Source Voltage (V) DS Capacitance 1 ...

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... Si7405DN Vishay Siliconix TYPICAL CHARACTERISTICS T 0 0.3 0.2 0.1 0.0 - 0 – Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 –4 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...

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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...