SI4835DY-T1-E3 Vishay Semiconductors, SI4835DY-T1-E3 Datasheet

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... 4 SO Top View Ordering Information: Si4835DY Si4835DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

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... Si4835DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance ...

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... 3500 3000 2500 2000 1500 1000 500 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 Si4835DY Vishay Siliconix Transfer Characteristics 55_C C 25_C 125_C Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

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... Si4835DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 1.0 = 250 mA I 0.8 D 0.6 0.4 0.2 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...

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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...