2SK1941-01R Fuji Electric holdings CO.,Ltd, 2SK1941-01R Datasheet
2SK1941-01R
Manufacturer Part Number
2SK1941-01R
Description
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2SK1941-01R.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK1941-01R
Manufacturer:
FUJITSU
Quantity:
12 500
2SK1941-01R
N-CHANNEL SILICON POWER MOSFET
Item
DC-DC converters
Thermal characteristics
Low on-resistance
Drain-source voltage
Continuous drain current
Pulsed drain current
Continuous reverse drain current
Gate-source peak voltage
Max. power dissipation
Operating and storage
temperature range
High speed switching
No secondary breakdown
High voltage
Avalanche-proof
Switching regulators
Maximum ratings and characteristics
Low driving power
V
UPS
General purpose power amplifier
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Thermal resistance
Applications
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Electrical characteristics (T
Item
Features
(t
(t
GS
on
off
=t
=t
=±30V Guarantee
d(on)
d(off)
+t
+t
r
f
)
)
on
off
c
=25°C unless otherwise specified)
Symbol
V
I
I
I
V
P
T
T
D
D(puls]
DR
D
ch
stg
GS
DS
R
R
Symbol
V
V
I
I
R
g
C
C
C
t
t
t
t
I
V
t
Symbol
GSS
d(on)
d(off)
f
AV
DSS
r
rr
th(ch-a)
th(ch-c)
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
Rating
+150
-55 to +150
600
±30
100
I
Test Conditions
I
I
V
V
I
I
V
V
f=1MHz
V
V
L=100 µ H Tch=25°C
I
I
D
16
64
16
D
D
D
D
F
F
DS
GS
DS
GS
CC
GS
=16A
=2xI
=I
channel to ambient
=1mA
=1mA
=8A V
=8A V
channel to case
DR
=600V
=300V R
= ±30V V
=25V
=0V
=10V
DR
V
GS
GS
DS
V
GS
=0V -di/dt=100A/ s T
=10V
=25V
V
Test Conditions
V
V
=0V T
DS
G
GS
DS
GS
=10
=V
=0V
=0V
=0V
GS
ch
Unit
°C
°C
V
A
A
A
V
W
=25°C
T
T
ch
ch
=25°C
=125°C
ch
FAP-IIA SERIES
=25°C
FUJI POWER MOSFET
JEDEC
EIAJ
Outline Drawings
Equivalent circuit schematic
5.45
2.1
Gate(G)
0.3
0.2
Min.
Min.
15.5
600
16
2.5
9.0
0.3
5.45
3300
1.6
1.1
Typ.
Typ.
310
180
100
500
ø3.2
10
10
18.0
70
35
70
+0.2
—0.1
0.2
0.3
3.0
0.2
0.37
1.0
0.2
1. Gate
2. Drain
3. Source
0.6
Source(S)
Drain(D)
4950
Max.
30.0
Max.
500
100
470
270
150
110
110
+0.2
1.25
55
5.5
3.5
1.0
0.55
1.5
0.3
3.2
3.5
Units
+0.3
Units
°C/W
°C/W
V
V
µA
mA
nA
S
pF
ns
A
V
ns
0.2
1
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2SK1941-01R Summary of contents
Page 1
... N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage V =±30V Guarantee GS Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) ...
Page 2
... Typical forward transconductance vs gfs 1.5 1.0 R DS(on 0 -50 Typical Drain-Source on state resistance vs. I 1.5 1.0 R DS(on 0 5.0 4.0 3.0 V GS(th 2.0 1 -50 2SK1941-01R On state resistance vs 100 150 T [ ° Gate threshold voltage vs 100 150 T [ ° ...
Page 3
... 1.0 1 2SK1941-01R Typical input charge 40 80 120 Allowable power dissipation vs 100 T [ ° Safe operating area 160 ...