HN1K03FU TOSHIBA Semiconductor CORPORATION, HN1K03FU Datasheet
HN1K03FU
Manufacturer Part Number
HN1K03FU
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN1K03FU.pdf
(5 pages)
Specifications of HN1K03FU
Dc
N/A
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HN1K03FU
Manufacturer:
TOSHIBA
Quantity:
723
Part Number:
HN1K03FU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
HN1K03FU(TE85L,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
High Speed Switching Applications
Analog Switch Applications
Absolute Maximum Ratings
(Q1, Q2 Common)
Hign input impedance
Low gate threshold voltage : V
Excellent switching times
Small package
Enhancement-mode
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
*:
Drain-Source voltage
Gate-Source voltage
DC Drain current
Drain power dissipation
Channel temperature
Storage temperature range
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Total rating
Characteristic
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
: t
t
off
on
th
= 0.15μs (typ.)
= 0.16μs (typ.)
= 0.5V~1.5V
(Ta = 25°C)
Symbol
HN1K03FU
V
V
P
T
T
GSS
I
DS
stg
D
D
ch
*
−55~150
Rating
100
200
150
20
10
1
Unit
mW
mA
°C
°C
V
V
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
HN1K03FU
2-2J1C
―
―
2007-11-01
Unit in mm
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HN1K03FU Summary of contents
Page 1
... Total rating *: HN1K03FU = 0.5V~1. 0.16μs (typ.) = 0.15μs (typ.) (Ta = 25°C) Symbol Rating Unit GSS I 100 200 150 ch T −55~150 stg 1 HN1K03FU ― JEDEC EIAJ ― 2-2J1C TOSHIBA °C Weight: 6.8mg °C 2007-11-01 Unit in mm ...
Page 2
... 3V 1MHz oss 3V 10mA 0~2. 3V 10mA off V = 0~2. HN1K03FU Min. Typ. Max. ― ― 20 ― ― ― 0.5 ― ― 8 ― 8.5 ― 3.3 ― 9.3 ― 0.16 ― 0.15 Marking 2007-11-01 Unit 1 μA ― ...
Page 3
... Common) Switching Time Test Circuit 3 HN1K03FU 2007-11-01 ...
Page 4
... Common) 4 HN1K03FU 2007-11-01 ...
Page 5
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 HN1K03FU 20070701-EN GENERAL 2007-11-01 ...