MTDF1N02HDR2 Motorola, MTDF1N02HDR2 Datasheet
MTDF1N02HDR2
Related parts for MTDF1N02HDR2
MTDF1N02HDR2 Summary of contents
Page 1
... BA BA MTDF1N02HDR2 Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. ...
Page 2
... R THJA 240 300 P D — 0.42 — 3. — 1 — 1 — stg — – 150 Figure 2. Minimum FR–4 or G–10 PCB Motorola TMOS Power MOSFET Transistor Device Data Unit 8.0 V C/W Watts 10 mW C/W Watts mW ...
Page 3
... Reverse Recovery Storage Charge (1) Pulse Test: Pulse Width 300 s, Duty Cycle (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. Max limit – Typ SIGMA Motorola TMOS Power MOSFET Transistor Device Data Symbol (Cpk 2.0) (1) (3) V (BR)DSS I DSS I GSS (Cpk 2 ...
Page 4
... Figure 6. On–Resistance versus Drain Current 1000 100 10 1.0 0.1 0 5.0 100 125 150 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 8. Drain–to–Source Leakage Current Motorola TMOS Power MOSFET Transistor Device Data 100 –55 C 1.5 2.0 2.5 2 4.5 V 2.0 3.0 4 DRAIN CURRENT (AMPS) ...
Page 5
... Motorola TMOS Power MOSFET Transistor Device Data POWER MOSFET SWITCHING The capacitance (C iss ) is read from the capacitance curve at a voltage corresponding to the off–state condition when cal- culating t d(on) and is read at a voltage corresponding to the on–state when calculating t d(off) . ...
Page 6
... A ratio considered ideal and values less than 0.5 are considered snappy. Compared to Motorola standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter have less stored charge and a softer reverse re- covery characteristic ...
Page 7
... AN569, “Transient Thermal Resistance 100 SINGLE PULSE 1.0 0.1 0.01 0.1 Figure 14. Maximum Rated Forward Biased Motorola TMOS Power MOSFET Transistor Device Data di/dt = 300 A/ s Standard Cell Density t rr High Cell Density TIME Figure 13. Reverse Recovery Time ( SAFE OPERATING AREA – ...
Page 8
... DUTY CYCLE 1.0E–02 1.0E–01 1.0E+00 t, TIME (s) Figure 15. Thermal Response di/ 0. Motorola TMOS Power MOSFET Transistor Device Data R JC ( CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME J(pk) – (pk (t) 1.0E+01 1.0E+02 1.0E+03 TIME ...
Page 9
... When using infrared heating with the reflow soldering method, the difference shall be a maximum Motorola TMOS Power MOSFET Transistor Device Data between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process ...
Page 10
... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 100 C 140 C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 17. Typical Solder Heating Profile Motorola TMOS Power MOSFET Transistor Device Data STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX ...
Page 11
... CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 330.0 (13.20) MAX. NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 3. INCLUDES FLANGE DISTORTION AT OUTER EDGE. 4. DIMENSION MEASURED AT INNER HUB. Motorola TMOS Power MOSFET Transistor Device Data TAPE & REEL INFORMATION 8.10 (.318) 7.90 (.312) 5.40 (.212) 5.20 (.205) SECTION B– ...
Page 12
... Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “ ...