K6T0808C1D-TB70

Manufacturer Part NumberK6T0808C1D-TB70
Description70ns, 32Kx8 bit low low power CMOS static RAM
ManufacturerSamsung
K6T0808C1D-TB70 datasheet
 


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Page 4/9:

RECOMMENDED DC OPERATING CONDITIONS

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K6T0808C1D Family

RECOMMENDED DC OPERATING CONDITIONS

Item
Supply voltage
Ground
Input high voltage
Input low voltage
Note:
1. Commercial Product : T
=0 to 70 C, otherwise specified
A
Industrial Product : T
=-40 to 85 C, otherwise specified
A
2. Overshoot : V
+3.0V in case of pulse width 30ns
CC
3. Undershoot : -3.0V in case of pulse width 30ns
4. Overshoot and undershoot are sampled, not 100% tested
CAPACITANCE
1)
(f=1MHz, T
=25 C)
A
Item
Symbol
Input capacitance
Input/Output capacitance
1. Capacitance is sampled not, 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Input leakage current
I
LI
Output leakage current
I
LO
Operating power supply current
I
CC
I
CC1
Average operating current
I
CC2
Output low voltage
V
OL
Output high voltage
V
OH
Standby Current(TTL)
I
SB
Standby Current (CMOS)
I
SB1
1)
Symbol
Min
Typ
Vcc
4.5
5.0
Vss
0
0
V
2.2
IH
V
3)
-0.5
IL
Test Condition
C
V
=0V
IN
IN
C
V
=0V
IO
IO
Test Conditions
V
=Vss to Vcc
IN
CS=V
or OE=V
or WE=V
, V
=V
to Vcc
IH
IH
IL
IO
SS
I
=0mA, CS=V
V
=V
or V
, Read
IO
IL,
IN
IH
IL
Cycle time=1 s, 100% duty, I
=0mA
IO
CS 0.2V, V
0.2V, V
Vcc -0.2V
IN
IN
Cycle time=Min,100% duty, I
=0mA, CS=V
IO
I
=2.1mA
OL
I
=-1.0mA
OH
CS=V
, Other inputs=V
or V
IH
IH
IL
CS Vcc-0.2V, Other inputs=0~Vcc
CMOS SRAM
Max
Unit
5.5
V
0
V
-
Vcc+0.5V
2)
V
-
0.8
V
Min
Max
Unit
-
8
pF
-
10
pF
Min
Typ
Max
Unit
-1
-
1
A
-1
-
1
A
-
5
10
mA
Read
-
2
5
mA
Write
-
20
V
=V
or V
-
45
60
mA
IL,
IN
IH
IL
-
-
0.4
V
2.4
-
-
V
-
-
1
mA
Low Power
-
1
30
A
Low Low Power
-
0.2
5
A
Revision 1.0
November 1997