TC58FVB641XB-70 TOSHIBA Semiconductor CORPORATION, TC58FVB641XB-70 Datasheet

TC58FVB641XB-70

Manufacturer Part Number

TC58FVB641XB-70

Description

TC58FVB641XB-7064-MBIT (8M ] 8 BITS / 4M ] 16 BITS) CMOS FLASH MEMORY

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TC58FVB641XB-70.pdf (53 pages)

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TENTATIVE

64-MBIT (8M × 8 BITS / 4M × 16 BITS) CMOS FLASH MEMORY

DESCRIPTION

organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641/B641 features commands

for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based

on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The

TC58FVT641/B641 also features a Simultaneous Read/Write operation so that data can be read during a Write or

Erase operation.

FEATURES

•

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

• The products described in this document are subject to the foreign exchange and foreign trade laws.

• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

• The information contained herein is subject to change without notice.

The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

Power supply voltage

Operating temperature

Organization

Functions

Ta = −40°C~85°C

8M × 8 bits / 4M × 16 bits

Simultaneous Read/Write

Auto Program, Auto Erase

Fast Program Mode / Acceleration Mode

Program Suspend/Resume

Erase Suspend/Resume

data polling / Toggle bit

block protection, boot block protection

Automatic Sleep, support for hidden ROM area

common flash memory interface (CFI)

Byte/Word Modes

= 2.7 V~3.6 V

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

•

Block erase architecture

Boot block architecture

Mode control

Erase/Program cycles

Access time

Power consumption

Package

8 × 8 Kbytes / 127 × 64 Kbytes

TC58FVT641FT/XB: top boot block

TC58FVB641FT/XB: bottom boot block

Compatible with JEDEC standard commands

70 ns

100 ns (C

10 µA (Standby)

30 mA (Read operation)

15 mA (Program/Erase operations)

TSOPI48-P-1220-0.50 (weight: 0.52 g)

P-TFBGA63-0911-0.80AZ (Weight: TBD)

cycles typ.

TC58FVT641/B641FT/XB-70,-10

: 30 pF)

: 100 pF)

2001-09-06 1/53

000707EBA1

Related parts for TC58FVB641XB-70

TC58FVB641XB-70 Summary of contents

Page 1

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT (8M × 8 BITS / 4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words ...

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PIN ASSIGNMENT (TOP VIEW) … … … … TC58FVT641/B641FT A15 1 A14 2 A13 3 A12 4 A11 5 A10 A19 9 A20 RESET A21 13 WP /ACC ...

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BLOCK DIAGRAM /ACC Control Circuit WE BYTE RESET CE Command Register OE A0 A21 A-1 TC58FVT641/B641FT/XB-70,- Buffer Memory Cell Memory Cell Array Array Bank 0 Bank 15 DQ0 DQ15 ...

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MODE SELECTION MODE CE Read ID Read (Manufacturer Code) ID Read (Device Code) Standby Output Disable Write Block Protect 1 Verify Block Protect Temporary Block Unprotect Hardware Reset / Standby Boot Block Protect Notes ...

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COMMAND SEQUENCES BUS FIRST BUS COMMAND WRITE WRITE CYCLE SEQUENCE CYCLES Addr. REQ’D Read/Reset 1 XXXH Word 555H Read/Reset 3 Byte AAAH Word 555H ID Read 3 Byte AAAH Word 555H Auto-Program 4 Byte AAAH (3) Program Suspend 1 BK ...

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SIMULTANEOUS READ/WRITE OPERATION The TC58FVT641/B641 features a Simultaneous Read/Write operation. The Simultaneous Read/Write operation enables the device to simultaneously write data to or erase data from a bank while reading data from another bank. The TC58FVT641/B641 has a total of ...

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ID Read Mode ID Read Mode is used to read the device maker code and device code. The mode is useful in that it allows EPROM programmers to identify the device type automatically. ID read can be executed in two ...

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Command Write The TC58FVT641/B641 uses the standard JEDEC control commands for a single-power supply E Command Write is executed by inputting the address and data into the Command Register. The command is written by inputting a pulse to WE with ...

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Auto-Program Mode The TC58FVT641/B641 can be programmed in either byte or word units. Auto-Program Mode is set using the Program command. The program address is latched on the falling edge of the WE signal and data is latched on the ...

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Program Suspend/Resume Mode Program Suspend is used to enable Data Read by suspending the Write operation. The device accepts a Program Suspend command in Write Mode (including Write operations performed during Erase Suspend) but ignores the command in other modes. ...

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Auto Block Erase / Auto Multi-Block Erase Modes The Auto Block Erase Mode and Auto Multi-Block Erase Mode are set using the Block Erase command. The block address is latched on the falling edge of the WE signal in the ...

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BLOCK PROTECTION Block Protection is a function for disabling writing and erasing specific blocks. Block protection can be carried out in two ways: by supplying a high voltage (V voltage and a command sequence (see Block protection 2). (1) Block ...

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Hidden ROM Area The TC58FVT641/B641 features a 64-Kbyte hidden ROM area which is separate from the memory cells. The area consists of one block. Data Read, Write and Protect can be performed on this block. Because Protect cannot be released, ...

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COMMON FLASH MEMORY INTERFACE (CFI) The TC58FVT641/B641 conforms to the CFI specifications. To read information from the device, input the Query command followed by the address. In Word Mode DQ8~DQ15 all output 0s. To exit this mode, input the Reset ...

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ADDRESS A6~A0 DATA DQ15~DQ0 2CH 0002H 2DH 0007H 2EH 0000H 2FH 0020H 30H 0000H 31H 007EH 32H 0000H 33H 0000H 34H 0001H 40H 0050H 41H 0052H 42H 0049H 43H 0031H 44H 0031H 45H 0000H 46H 0002H 47H 0001H 48H 0001H ...

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HARDWARE SEQUENCE FLAGS The TC58FVT641/B641 has a Hardware Sequence flag which allows the device status to be determined during an auto mode operation. The output data is read out using the same timing as that used when ...

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DQ6 (Toggle bit 1) The device status can be determined by the Toggle Bit function during an Auto-Program or auto-erase operation. The Toggle bit begins toggling on the rising edge the last bus cycle. DQ6 alternately outputs ...

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DATA PROTECTION The TC58FVT641/B641 includes a function which guards against malfunction or data corruption. Protection against Program/Erase Caused by Low Supply Voltage To prevent malfunction at power-on or power-down, the device will not accept commands while ...

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ABSOLUTE MAXIMUM RATINGS SYMBOL V V Supply Voltage Input Voltage IN V Input/Output Voltage DQ V Maximum Input Voltage for A9, OE and RESET IDH V Maximum Input Voltage for ACCH P Power Dissipation D T Soldering ...

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DC CHARACTERISTICS SYMBOL PARAMETER I Input Leakage Current LI I Output Leakage Current LO V Output High Voltage OH V Output Low Voltage Average Read Current DDO1 Average Program Current DDO2 ...

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AC CHARACTERISTICS AND OPERATING CONDITIONS READ CYCLE PRODUCT NAME OUTPUT CAPACITANCE LOAD (C SYMBOL PARAMETER t Read Cycle Time RC t Address Access Time ACC t CE Access Time Access Time Output Low-Z ...

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COMMAND WRITE/PROGRAM/ERASE CYCLE SYMBOL t Command Write Cycle Time CMD Address Set-up Time / BYTE Set-up Time tAS t Address Hold Time / BYTE Hold Time AH t Address Hold Time from WE High level AHW t Data Set-up Time ...

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TIMING DIAGRAMS Read / ID Read Operation Address OEH D OUT ID Read Operation (apply OUT Read Mode ...

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Command Write Operation This is the timing of the Command Write Operation. The timing which is described in the following pages is essentially the same as the timing shown on this page. • WE Control Address ...

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ID Read Operation (input command sequence) Address 555H t CMD OES WE D AAH IN D OUT Read Mode (input of ID Read command sequence) (Continued) 555H Address t CMD AAH IN D ...

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Auto-Program Operation ( WE 555H Address t CMD OES WE D AAH IN D OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program data Auto Chip Erase / Auto Block Erase ...

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Auto-Program Operation ( CE Address 555H t CMD OES AAH D OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program data Auto Chip Erase / Auto Block Erase ...

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Program/Erase Suspend Operation Address B0H IN D Hi-Z OUT Program/Erase Mode RA: Read address Program/Erase Resume Operation Address OES WE t DF1 t DF2 ...

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during Auto Program/Erase Operation Hardware Reset Operation WE RESET Read after RESET Address RESET D OUT TC58FVT641/B641FT/XB-70,-10 Command input sequence READY ...

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BYTE during Read Operation CE t CEBTS OE BYTE DQ0~DQ7 DQ8~DQ14 DQ15/A-1 BYTE during Write Operation CE WE BYTE TC58FVT641/B641FT/XB-70,-10 t BTD Data Output Data Output Data Output t ACC Data Output Address Input 2001-09-06 30/53 ...

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DATA Hardware Sequence Flag ( Last Address Command Address t CMD Last D Command IN Data DQ7 DQ0~DQ6 t BUSY PA: Program address BA: Block address Hardware Sequence Flag (Toggle bit) Address t CE ...

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Block Protect 1 Operation Address VPT VPS WE t CESP CE D OUT BA: Block address *: 01H indicates that block is protected. TC58FVT641/B641FT/XB-70,-10 Block ...

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Block Protect 2 Operation Address t CMD VPS RESET D 60H IN D OUT BA: Block address Address of next block *: 01H indicates that block ...

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FLOWCHARTS Auto-Program Address = Address + 1 Note: The above command sequence takes place in Word Mode. TC58FVT641/B641FT/XB-70,-10 Start Auto-Program Command Sequence (see below) DATA Polling or Toggle Bit No Last Address? Yes Auto-Program Completed Auto-Program Command Sequence (address/data) 555H/AAH ...

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Fast Program Address = Address + 1 Fast Program Set Command Sequence (address/data) 555H/AAH 2AAH/55H 555H/20H TC58FVT641/B641FT/XB-70,-10 Start Fast Program Set Command Sequence (see below) Fast Program Command Sequence (see below) DATA Polling or Toggle Bit No Last Address? Yes ...

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Auto Erase Auto Chip Erase Command Sequence (address/data) 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H Note: The above command sequence takes place in Word Mode. TC58FVT641/B641FT/XB-70,-10 Start Auto Erase Command Sequence (see below) DATA Polling or Toggle Bit Auto Erase Completed ...

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DQ7 DATA Polling Start Read Byte (DQ0~DQ7) Addr DQ7 = Data? No DQ5 = 1? Read Byte (DQ0~DQ7) Addr DQ7 = Data? Fail DQ6 Toggle Bit Start Read Byte (DQ0~DQ7) Addr DQ6 = Toggle? ...

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Block Protect 1 PLSCNT = 1 Set up Block Address Addr. = BPA Wait for 4 µ Wait for 4 µs Wait for 100 µs Wait for 4 µs Wait for 4 µs Verify Block ...

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Block Protect 2 RESET = V Wait for 4 µs PLSCNT = 1 Block Protect 2 Command First Bus Write Cycle (XXXH/60H) Set up Address Addr. = BPA Block Protect 2 Command Second Bus Write Cycle Wait for 100 µs ...

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BLOCK ERASE ADDRESS TABLES (1) TC58FVT641 (top boot block) BANK BLOCK # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA0 L L BA1 L L BA2 L L BA3 L L BK0 BA4 L L BA5 ...

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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA32 BA33 BA34 BA35 BK4 BA36 BA37 L H ...

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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA64 BA65 BA66 BA67 BK8 BA68 BA69 H L ...

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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA96 BA97 BA98 BA99 BK12 BA100 BA101 H H ...

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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 H BA127 H H BA128 BA129 BA130 BK16 BA131 BA132 H H ...

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TC58FVB641 (bottom boot block) BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA0 BA1 BA2 BA3 BK0 BA4 L ...

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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA31 BA32 BA33 BA34 BK4 BA35 BA36 L L ...

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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA63 BA64 BA65 BA66 BK8 BA67 BA68 L H ...

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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA95 BA96 BA97 BA98 BK12 BA99 BA100 H L ...

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BANK BLOCK BANK ADDRESS # # A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 BA127 BA128 BA129 BA130 BK16 BA131 BA132 H H ...

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BLOCK SIZE TABLE (1) TC58FVT641 (top boot block) BLOCK SIZE BLOCK # BYTE MODE BA0~BA7 64 Kbytes BA8~BA15 64 Kbytes BA16~BA23 64 Kbytes BA24~BA31 64 Kbytes BA32~BA39 64 Kbytes BA40~BA47 64 Kbytes BA48~BA55 64 Kbytes BA56~BA63 64 Kbytes BA64~BA71 64 ...

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