MRF18060A Motorola, MRF18060A Datasheet

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MRF18060A

Manufacturer Part Number
MRF18060A
Description
MRF18060ARF POWER FIELD EFFECT TRANSISTORS
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1805 – 1880 MHz.
• Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
• Excellent Thermal Stability
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
REV 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for PCN and PCS base station applications with frequencies from
13 Inch Reel.
40
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Power Gain — 13 dB (Typ) @ 60 Watts
Efficiency — 45% (Typ) @ 60 Watts
µ″ Nominal.
C
≥ 25°C
Test Conditions
Characteristic
Rating
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
MRF18060ALSR3
D
J
MRF18060ASR3
CASE 465–06, STYLE 1
MRF18060AR3
MRF18060ALSR3, MRF18060ASR3
1.80 – 1.88 GHz, 60 W, 26 V
MRF18060A
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465A–06, STYLE 1
MRF18060A
NI–780
M3 (Minimum)
2 (Minimum)
–65 to +150
–0.5, +15
Value
Class
1.03
Max
0.97
NI–780S
180
200
65
Order this document
by MRF18060A/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF18060A Summary of contents

Page 1

... CASE 465A–06, STYLE 1 MRF18060ALSR3, MRF18060ASR3 Symbol V DSS V –0.5, + –65 to +150 stg (Minimum) M3 (Minimum) Symbol R θJC MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 Order this document by MRF18060A/D NI–780S Value Unit 65 Vdc Vdc 180 Watts 1.03 W/°C °C °C 200 Class Max Unit °C/W ...

Page 2

... All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. (2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch consistency. MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 2 = 25°C unless otherwise noted) Symbol ...

Page 3

... Figure 1. 1805 – 1880 MHz Test Fixture Schematic Figure 2. 1805 – 1880 MHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA Z1 0.47″ x 0.09″ Microstrip Z2 1.16″ x 0.09″ Microstrip Z3 0.57″ x 0.95″ Microstrip Z4 0.59″ x 1.18″ Microstrip Z5 1.26″ x 0.15″ Microstrip Z6 1.15″ x 0.09″ Microstrip Z7 0.37″ x 0.09″ Microstrip MRF18060 MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 3 ...

Page 4

... Figure 4. 1800 – 2000 MHz Demo Board Component Layout MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 LP2951 Micro–8 Voltage Regulator T2 BC847 SOT–23 NPN Transistor Z1 0.159″ x 0.055″ Microstrip Z2 0.982″ ...

Page 5

... TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) Figure 5. Power Gain versus Output Power Figure 7. Output Power versus Frequency MOTOROLA RF DEVICE DATA Figure 6. Output Power versus Supply Voltage Figure 8. Output Power and Efficiency versus Input Power Figure 9. Wideband Gain and IRL (at Small Signal) MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 h 5 ...

Page 6

... Complex conjugate of the optimum load Note: Z Figure 10. Series Equivalent Input and Output Impedance MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 6 Ω Ω Ω MHz 1700 0.60 + j2.53 2.27 + j3.44 1800 0.80 + j3.20 2.05 + j3.05 1900 0.92 + j3.42 1.90 + j2.90 2000 1.07 + j3.59 1.64 + j2.88 2100 1.31 + j4.00 1.29 + j2.99 = Complex conjugate of the source impedance. given voltage, P1dB, gain, efficiency, bias current and frequency ...

Page 7

... PACKAGE DIMENSIONS Q R (LID) S (INSULATOR) SEATING T PLANE CASE 465–06 ISSUE F NI–780 MRF18060A Z R (LID) S (INSULATOR) CASE 465A–06 ISSUE F NI–780S MRF18060ALSR3, MRF18060ASR3 MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX ...

Page 8

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 8 MOTOROLA RF DEVICE DATA MRF18060A/D ...

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