MRF5812R1

Manufacturer Part NumberMRF5812R1
DescriptionRF NPN Transistor
ManufacturerMicrosemi Corporation
MRF5812R1 datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
Page 1/5

Download datasheet (174Kb)Embed
Next
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Low Noise - 2.5 dB @ 500 MHZ
Associated Gain = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective SO-8 package
DESCRIPTION:
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Thermal Data
P
Total Device Dissipation @ TC = 25ºC
D
Derate above 25ºC
MSC1319.PDF 10-25-99
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
MRF5812, R1, R2
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
Value
Unit
15
Vdc
30
Vdc
2.5
Vdc
200
mA
1.25
Watts
10
mW/ ºC