IDT71V124S20Y

Manufacturer Part NumberIDT71V124S20Y
DescriptionIDT71V124S20Y3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
ManufacturerIntegrated Device Technology, Inc.
IDT71V124S20Y datasheet
 

Specifications of IDT71V124S20Y

CaseSOJ  
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IDT71V124, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit), Revolutionary Pinout
Pin Configuration
A
0
1
32
A
2
31
1
A
3
30
2
A
4
29
3
CS
5
28
I/O
6
27
0
SO32-3
7
26
I/O
1
V
8
25
DD
GND
9
24
I/O
10
23
2
I/O
11
22
3
WE
12
21
A
13
20
4
A
14
19
5
A
15
18
6
A
16
17
7
SOJ
Top View
Truth Table
(1,2)
CS
OE
WE
I/O
L
L
H
DATA
OUT
L
X
L
DATA
IN
L
H
H
High-Z
H
X
X
High-Z
(3)
X
X
High-Z
V
HC
NOTES:
1. H = V
, L = V
, x = Don't care.
IH
IL
2. V
= 0.2V, V
= V
–0.2V.
LC
HC
DD
3. Other inputs V
or V
.
HC
LC
Capacitance
(T
= +25°C, f = 1.0MHz, SOJ package)
A
(1)
Symbol
Parameter
C
Input Capacitance
IN
C
I/O Capacitance
V
I/O
NOTE:
1. This parameter is guaranteed by device characterization, but is not production
tested.
DC Electrical Characteristics
(V
= 3.3V ± 10%, Commercial and Industrial Temperature Ranges)
DD
Symbol
Parameter
|I
|
Input Leakage Current
LI
|I
|
Output Leakage Current
LO
V
Output Low Voltage
OL
V
Output High Voltage
OH
Absolute Maximum Ratings
Symbol
A
16
A
15
(2)
V
TERM
A
14
A
13
OE
T
A
I/O
7
T
BIAS
I/O
6
GND
T
STG
V
DD
P
I/O
T
5
I/O
4
I
OUT
A
12
A
11
NOTES:
A
10
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
A
9
cause permanent damage to the device. This is a stress rating only and functional
A
8
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
3484 drw 02
maximum rating conditions for extended periods may affect reliabilty.
2. V
must not exceed V
TERM
Recommended Operating
Function
Temperature and Supply Voltage
Read Data
Grade
Write Data
Output Disabled
Commercial
Deselected – Standby (I
)
Industrial
SB
Deselected – Standby (I
)
SB1
3484 tbl 01
Recommended DC Operating
Conditions
Symbol
V
DD
Conditions
Max.
Unit
GND
V
= 3dV
8
pF
IN
V
IH
= 3dV
8
pF
OUT
V
IL
3484 tbl 03
NOTE:
1. V
(min.) = –1V for pulse width less than 5ns, once per cycle.
IL
Test Condition
V
= Max., V
= GND to V
DD
IN
= Max., CS = V
V
DD
I
= 8mA, V
= Min.
OL
DD
I
= –8mA, V
OH
DD
6.42
2
Commercial and Industrial Temperature Ranges
Rating
Value
Terminal Voltage with
–0.5 to +4.1
Respect to GND
Operating Temperature
0 to +70
Temperature Under Bias
–55 to +125
Storage Temperature
–55 to +125
Power Dissipation
0.5
DC Output Current
50
+ 0.5V.
DD
Temperature
GND
0°C to +70°C
0V
–40°C to +85°C
0V
Parameter
Min.
Typ.
Supply Voltage
3.0
3.3
Ground
0
0
____
Input High Voltage
2.0
(1)
____
Input Low Voltage
–0.3
IDT71V124
Min.
___
DD
, V
= GND to V
___
IH
OUT
DD
___
= Min.
2.4
(1)
Unit
(2)
V
o
C
o
C
o
C
W
mA
3484 tbl 02
V
DD
See Below
See Below
3484 t b l 02a
Max.
Unit
3.6
V
0
V
V
+0.3
V
DD
0.8
V
3484 tbl 04
Unit
Max.
5
µ A
5
µ A
0.4
V
___
V
3484 tbl 05