TC551001BFL-70L TOSHIBA Semiconductor CORPORATION, TC551001BFL-70L Datasheet

TC551001BFL-70L

Manufacturer Part Number

TC551001BFL-70L

Description

TC551001BFL-70LSILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TC551001BFL-70L.pdf (13 pages)

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TOSHIBA

SILICON GATE CMOS

131,072 WORD x 8 BIT STATIC RAM

Description

The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,

and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an

operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is

placed in a low power standby mode in which the standby current is 2 A typically. The TC551001BPL has three control inputs.

Chip Enable inputs (CE1, CE2) allow for device selection and data retention control, while an Output Enable input (OE) provides fast

memory access. The TC551001BPL is suitable for use in microprocessor application systems where high speed, low power, and

battery backup are required.

outline plastic package (forward, reverse type).

Pin Names

Features

• Low power dissipation :

• Standby current:

• 5V single power supply

• Access time (max.)

• Power down feature:

• Data retention supply voltage:

• Inputs and outputs directly TTL compatible

• Package

Access Time

CE1 Access Time

CE2 Access Time

OE Access Time

I/O1 ~ I/O8

PIN NAME

CE1, CE2

A0 ~ A16

PIN NO.

GND

The TC551001BPL is offered in a standard dual-in-line 32-pin plastic package, a small outline plastic package, and a thin small

N.C.

R/W

Address Inputs

Read/Write Control Input

Output Enable Input

Chip Enable Inputs

Data Input/Output

Power (+5V)

Ground

No Connection

TC551001BPL

TC551001BFL

TC551001BFTL

TC551001BTRL

TC551001BPL/BFL/BFTL/BTRL

70ns

35ns

-70L

27.5mW/MHz (typ.)

4 A (max.) at Ta = 25 C

CE1, CE2

TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC

2.0 ~ 5.5V

: DIP32-P-600

: SOP32-P-525

: TSOP32-P-0820

: TSOP32-P-0820A

85ns

45ns

-85L

R/W

I/O1

CE2

I/O2

TC551001BPL/BFL/BFTL/BTRL-70L/85L

I/O3

Pin Connection (Top View)

TSOP Pinout

GND

I/O4

I/O5

I/O6

I/O7

I/O8

CE1

Related parts for TC551001BFL-70L

TC551001BFL-70L Summary of contents

Page 1

... CE2 Access Time 70ns OE Access Time 35ns • Power down feature: CE1, CE2 • Data retention supply voltage: • Inputs and outputs directly TTL compatible • Package TC551001BPL TC551001BFL TC551001BFTL TC551001BTRL Pin Names A0 ~ A16 Address Inputs R/W Read/Write Control Input OE Output Enable Input ...

Page 2

TC551001BPL/BFL/BFTL/BTRL-70L/85L Block Diagram Operating Mode OPERATION MODE CE1 Read L Write L Output Deselect L H Standby * * Maximum Ratings SYMBOL ITEM V Power Supply Voltage DD V Input Voltage IN V Input and Output Voltage ...

Page 3

SR01020795 DC Recommended Operating Conditions SYMBOL PARAMETER V Power Supply Voltage DD V Input High Voltage IH V Input Low Voltage IL V Data Retention Supply Voltage DH * -3.0V at pulse width of 50ns Max. DC and Operating Characteristics ...

Page 4

TC551001BPL/BFL/BFTL/BTRL-70L/85L AC Characteristics ( Read Cycle SYMBOL PARAMETER t Read Cycle Time RC t Address Access Time ACC t CE1 Access Time CO1 t CE2 Access Time CO2 t Output Enable to Output in ...

Page 5

SR01020795 Timing Waveforms (1) Read Cycle (4) Write Cycle 1 (R/W Controlled Write) TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC Static RAM TC551001BPL/BFL/BFTL/BTRL-70L/85L 5 . ...

Page 6

TC551001BPL/BFL/BFTL/BTRL-70L/85L (4) Write Cycle 2 (CE1 Controlled Write) (4) Write Cycle 3 (CE2 Controlled Write) 6 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC Static RAM SR01020795 . ...

Page 7

SR01020795 Notes: 1. R/W is High for Read Cycle. 2. Assuming that CE1 Low transition or CE2 High transition occurs coincident with or after the R/W low transition, Out- puts remain in a high impedance state. 3. Assuming that CE1 ...

Page 8

TC551001BPL/BFL/BFTL/BTRL-70L/85L Data Retention Characteristics ( SYMBOL PARAMETER V Data Retention Supply Voltage DH I Standby Current DDS2 t Chip Deselect to Data Retention Mode CDR t Recovery Time (max ...

Page 9

SR01020795 Outline Drawing DIP32-P-600 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC Static RAM TC551001BPL/BFL/BFTL/BTRL-70L/85L Unit ...

Page 10

TC551001BPL/BFL/BFTL/BTRL-70L/85L Outline Drawing SOP32-P-525 10 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC Static RAM SR01020795 Unit ...

Page 11

SR01020795 Outline Drawing TSOP32-P-0820 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC Static RAM TC551001BPL/BFL/BFTL/BTRL-70L/85L Unit ...

Page 12

TC551001BPL/BFL/BFTL/BTRL-70L/85L Outline Drawing TSOP32-P-0820A 1. This technical data may be controlled under U.S. Export Administration Regulations and may be subject to the approval of the U.S. Department of Commerce prior to export. Any export or re-export, directly or indi- rectly, ...

Page 13

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