QM200HA-HK MITSUBISHI, QM200HA-HK Datasheet - Page 2

• Manufacturer Part Number: QM200HA-HK
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI

ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
V
V
V
V
I
–I
P
I
–I
T
T
V
I
I
I
V
V
–V
h
t
t
t
R
R
R
C
B
CEX
CBO
EBO
on
s
f
j
stg
FE
CEX (SUS)
CEX
CBO
EBO
C
iso
CE (sat)
BE (sat)
th (j-c) Q
th (j-c) R
th (c-f)
C
CSM
Symbol
Symbol
CEO
—
—
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Parameter
Parameter
(Tj=25 C, unless otherwise noted)
I
V
Emitter open
Collector open
DC
DC (forward diode current)
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M5
Typical value
V
V
V
I
–I
I
V
Transistor part
Diode part
Conductive grease applied
(Tj=25 C, unless otherwise noted)
C
C
C
C
EB
CE
CB
EB
CC
C
=1A, V
=200A, I
=200A, V
=25 C
=200A (diode forward voltage)
=2V
=600V, V
=7V
=600V, Emitter open
=300V, I
EB
B
=2V
CE
=2.6A
C
EB
=2V/5V
=200A, I
=2V
B1
Test conditions
=–I
Conditions
B2
=4A
MITSUBISHI TRANSISTOR MODULES
HIGH POWER SWITCHING USE
75/100
Min.
—
—
—
—
—
—
—
—
—
—
—
—
–40~+150
–40~+125
1.47~1.96
1.47~1.96
QM200HA-HK
Ratings
15~20
15~20
Limits
1250
2000
2500
Typ.
600
600
600
200
200
420
12
—
—
—
—
—
—
—
—
—
—
—
—
—
7
INSULATED TYPE
Max.
1.75
0.39
0.05
200
4.0
4.0
2.0
2.5
2.0
3.0
0.1
12
—
kg·cm
kg·cm
Feb.1999
Unit
N·m
N·m
Unit
mA
mA
mA
C/ W
C/ W
C/ W
W
—
V
V
V
V
A
A
A
A
V
g
V
V
V
C
C
s
s
s