QM200HA-HK MITSUBISHI, QM200HA-HK Datasheet - Page 4

• Manufacturer Part Number: QM200HA-HK
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI

0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
10
10
10
10
10
10
FORWARD BIAS SAFE OPERATING AREA
10
2
7
7
5
4
3
2
7
7
5
4
3
2
7
5
3
2
5
3
2
7
5
3
2
0
1
0
7
COLLECTOR-EMITTER VOLTAGE V
10
3
2
1
0
10
10
–1
TRANSIENT THERMAL IMPEDANCE
T
I
I
BASE REVERSE CURRENT –I
–3
NON–REPETITIVE
0
V
0
B1
CHARACTERISTIC (TRANSISTOR)
C
C
CC
=200A
2
=25°C
2 3 45 7
2
=4A
SWITCHING TIME VS. BASE
=300V
2 3 4 5 7
3
3
T
T
4
4
j
j
=25°C
=125°C
CURRENT (TYPICAL)
5
5
t
7
7
f
10
10
10
1
–2
1
TIME (s)
2
2
10
3
3
4
4
0
5
5
7
7
10
2 3 4 5 7
10
–1
2
t
s
2
2
3
3
B2
4
4
(A)
5
CE
5
7
7
10
(V)
10
10
1
0
3
400
300
200
100
100
10
10
10
10
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
REVERSE BIAS SAFE OPERATING AREA
7
5
3
2
7
5
3
2
7
5
3
2
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
j
=125°C
100
20
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
0.4
200
40
HIGH POWER SWITCHING USE
300
60
0.8
–V
CEO
400
80 100 120 140
(V)
1.2
QM200HA-HK
500
SECOND
BREAKDOWN
AREA
I
I
B2
B2
600
T
T
=–3A
=–8A
C
1.6
j
j
=25°C
=125°C
INSULATED TYPE
( C)
700
CE
800
160
2.0
(V)
Feb.1999