1MBI300NN-120 Fuji Electric holdings CO.,Ltd, 1MBI300NN-120 Datasheet

1MBI300NN-120

Manufacturer Part Number

1MBI300NN-120

Description

IGBT MODULE(N series)

Manufacturer

Fuji Electric holdings CO.,Ltd

Datasheet

1.1MBI300NN-120.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

1MBI300NN-120

Manufacturer:

FUJI

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

1MBI300NN-120

Manufacturer:

FUJI

Quantity:

560

Company:

Meier Automation Equipment Co., Limited

Part Number:

1MBI300NN-120

Manufacturer:

FUJITSU/富士通

Quantity:

20 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

1MBI300NN-120

Quantity:

Current page: 1 of 4
Download datasheet (96Kb)

IGBT MODULE ( N series )

n n Features

• Square RBSOA

• Low Saturation Voltage

• Less Total Power Dissipation

• Improved FWD Characteristic

• Minimized Internal Stray Inductance

• Overcurrent Limiting Function (4~5 Times Rated Current)

n n Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

n n Maximum Ratings and Characteristics

•

Zero Gate Voltage Collector Current

Gate-Emitter Leackage Current

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Input capacitance

Output capacitance

Reverse Transfer capacitance

Turn-on Time

Turn-off Time

Diode Forward On-Voltage

Reverse Recovery Time

•

Thermal Resistance

Collector-Emitter Voltage

Gate -Emitter Voltage

Collector

Current

Max. Power Dissipation

Operating Temperature

Storage Temperature

Isolation Voltage

Screw Torque

Absolute Maximum Ratings

Electrical Characteristics

Thermal Characteristics

Items

Continuous

1ms

Continuous

1ms

A.C. 1min.

( at T

( T

=25°C )

=25°C

Note: *1:Recommendable Value; 2.5

Terminals *2

Terminals *3

Mounting *1

-I

)

Symbols

C PULSE

CES

GES

OFF

CES

GES

C PULSE

stg

*2:Recommendable Value; 3.5

*3:Recommendable Value; 1.3

GE(th)

CE(sat)

ies

oes

res

th(c-f)

th(j-c)

-40

Ratings

+150

1200

2100

2500

IGBT

Diode

With Thermal Compound

300

600

300

600

3.5

4.5

1.7

f=1MHz

+125

=300A V

=300A

3.5 Nm (M5) or (M6)

4.5 Nm (M6)

1.7 Nm (M4)

=2.7

=0V V

=20V I

=15V I

=0V

=10V

=600V

= 15V

Test Conditions

n n Outline Drawing

Units

=300mA

=300A

°C

=1200V

= 20V

=0V

n Equivalent Circuit

Min.

4.5

0.0125

48000

17400

15480

Typ.

0.65

0.25

0.95

0.35

Max.

0.06

0.12

350

4.0

7.5

3.3

1.2

0.6

1.5

0.5

3.0

Units

°C/W

µA

µs

Related parts for 1MBI300NN-120

1MBI300NN-120 Summary of contents

Page 1

IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current ...

Page 2

Collector current vs. Collector-Emitter voltage T =25° 20V, 15V, 12V, 10V GE 600 400 200 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage T =25° ...

Page 3

Switching time vs =600V, I =300A, V =±15V 1000 100 1 Gate resistance : R Forward current vs. Forward voltage V = =125°C 25°C j 600 400 200 ...

Page 4

Switching loss vs. Collector current V =600V 125 100 100 200 300 Collector Current : I Fuji Electric GmbH Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 - ...

Related keywords

1MBI300NN-120 datasheet
1MBI300NN-120 data sheet
1MBI300NN-120 pdf datasheet
1MBI300NN-120 component
1MBI300NN-120 part
1MBI300NN-120 distributor
1MBI300NN-120 RoHS
1MBI300NN-120 datasheet download