MG150J7KS60 TOSHIBA Semiconductor CORPORATION, MG150J7KS60 Datasheet
MG150J7KS60
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MG150J7KS60 Summary of contents
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... TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 (600V/150A 7in1) High Power Switching Applications Motor Control Applications · Integrates inverter and brake power circuit into a single package The electrodes are isolated from case. · Low thermal resistance · 1.6 V (typ.) · CE (sat) ...
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... Package Dimensions: 2-108G1B 13. Open 17. G (X) Open 2. Open 3. G (U) Open 6. Open 7. G (V) Open 10. Open 11. G (W) 14. TH1 15. TH2 18. G (Y) 19. G (Z) 2 MG150J7KS60 (V) 12. E (W) 16. G (B) 20. E (L) 2001-10-03 ...
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... ies (on) = 300 150 off = ± 150 MG150J7KS60 Rating Unit 600 V ±20 V 150 A 300 150 A 300 750 W 600 V ± 150 375 W 600 150 150 °C -40~125 ° ...
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... Tc = 25°C/Tc = 85°C B25/85 Inverter IGBT stage Inverter FRD stage R th (j-c) Brake IGBT stage Brake FRD stage ¾ ( (on) 4 MG150J7KS60 Min Typ. Max Unit ¾ ¾ ±500 nA ¾ ¾ 1.0 mA 5.0 6.5 8.0 V ¾ 1.6 2.2 V ¾ ¾ 2.2 ¾ ¾ ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 MG150J7KS60 000707EAA 2001-10-03 ...