MG600Q1US61 TOSHIBA Semiconductor CORPORATION, MG600Q1US61 Datasheet
MG600Q1US61
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MG600Q1US61 Summary of contents
Page 1
... TOSHIBA Weight: 465 g (typ.) Symbol Rating V 1200 CES V ±20 GES I 600 C I 600 F P 5400 C T 150 j -40 to 125 T stg 2500 V Vrms isol (AC 1 minute) ¾ 3 ¾ MG600Q1US61 ― ― 2-109F1A Unit °C °C N·m N·m 2002-10-04 Unit: mm ...
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... di/dt = 1500 A/ms Transistor stage R th (j-c) Diode stage (off MG600Q1US61 Min Typ. Max = 0 V ¾ ¾ ±500 = 0 V ¾ ¾ 6.0 7.0 8 25°C ¾ 2.1 2 125°C ¾ 2.7 3 MHz ¾ ¾ 50000 ¾ ...
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... V Rank > CE (sat (sat) Rank Symbol Min 21 1.80 22 1.90 23 2.00 24 2.10 25 2.20 26 2.30 27 2.40 < Mark Position > Mark position 24D < V Rank > Max Rank Symbol 2.10 D 2.20 E 2.30 F 2.40 G 2.50 2.60 2.70 3 MG600Q1US61 Min Max 1.90 2.20 2.10 2.40 2.30 2.60 2.50 2.80 2002-10-04 ...
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... Gate-emitter voltage V 900 Common emitter 800 700 600 500 400 300 200 900 100 Gate-emitter voltage V 4 MG600Q1US61 I – ( – 600 900 300 ...
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... 25° 125°C 1 500 600 0 5 MG600Q1US61 – 400 12 600 200 1000 2000 3000 4000 5000 Charge Q (nC) G Switching loss – ...
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... Curves must be with increase in temperature 100 1 ( 25°C 0.3 0.1 0.03 0.01 0.003 0.001 0.0003 0.001 1200 1400 (V) 6 MG600Q1US61 E – I dsw 25° 125°C 100 200 300 400 500 600 Forward current I (A) F Safe operating area 50 ms* 100 ms ...
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... Short circuit soa 10000 1000 100 ± 125° 200 400 600 800 1000 Collector-emitter voltage V CE 1200 1400 (V) 7 MG600Q1US61 2002-10-04 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 MG600Q1US61 000707EAA 2002-10-04 ...