2SC5010-T1 NEC, 2SC5010-T1 Datasheet

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2SC5010-T1

Manufacturer Part Number
2SC5010-T1
Description
Manufacturer
NEC
Datasheet

Specifications of 2SC5010-T1

Dc
N/A

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Document No. P10389EJ2V0DS00 (2nd edition)
(Previous No. TD-2401)
Date Published July 1995 P
Printed in Japan
DESCRIPTION
VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an
NEC proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High f
• Low C
• Low NF
• High |S
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
* Please contact with responsible NEC person, if you require evaluation
ABSOLUTE MAXIMUM RATINGS (T
2SC5010
2SC5010-T1
The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
PART
NUMBER
sample. Unit sample quantity shall be 50 pcs.
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
T
re
21e
|
2
: 12.0 GHz TYP. (@ V
: 0.4 pF TYP. (@ V
: 1.5 dB TYP. (@ V
: 8.5 dB TYP. (@ V
50 pcs/Unit.
3 kpcs/Reel.
QUANTITY
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
Embossed tape 8 mm wide.
Pin3(Collector) face to perforation side
of the tape.
CE
CE
CE
CE
= 3 V, I
= 3 V, I
= 3 V, I
V
V
V
T
P
CBO
CEO
EBO
I
T
= 3 V, I
C
stg
PACKING STYLE
T
j
DATA SHEET
A
E
C
C
= 25 ˚C)
= 0, f = 1 MHz)
= 3 mA, f = 2 GHz)
= 10 mA, f = 2 GHz)
C
–65 to +150
= 10 mA, f = 2 GHz)
125
150
30
9
6
2
mW
mA
˚C
˚C
V
V
V
SILICON TRANSISTOR
PACKAGE DIMENSIONS
1
2
1. Emitter
2. Base
3. Collector
in milimeters
2SC5010
1.6 ± 0.1
0.8 ± 0.1
©
3
1993

Related parts for 2SC5010-T1

2SC5010-T1 Summary of contents

Page 1

... Ultra Super Mini Mold Package. ORDERING INFORMATION PART QUANTITY NUMBER 2SC5010 50 pcs/Unit. 2SC5010-T1 3 kpcs/Reel. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage ...

Page 2

... ˚C) A MIN. TYP. MAX. UNIT 0 150 12.0 GHz 0.4 0 7.0 8.5 dB 1.5 2 2SC5010 TEST CONDITIONS mA mA GHz MHz ...

Page 3

... INSERTION POWER GAIN vs. COLLECTOR CURRENT 0.5 1 2SC5010 0.5 1.0 – Base to Emitter Voltage – CURRENT GAIN vs. COLLECTOR CURRENT 100 I – Collector Current – GHz – Collector Current – mA ...

Page 4

... Collector Current – FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 5 MHz 2.0 1.0 0.5 0.2 0 – Collector to Base Voltage – MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. FREQUENCY 0.1 0.2 0.5 f – Frequency – GHz 50 2SC5010 MAG 21e ...

Page 5

... S 22 MAG ANG .931 –15.0 .810 –25.9 .700 –32.4 .612 –36.2 .547 –38.2 .499 –39.4 .461 –40.4 .430 –40.9 .405 –41.7 .386 –42.2 .370 –42.8 .354 – ...

Page 6

... S 22 MAG ANG .976 –9.1 .927 –17.4 .864 –24.2 .795 –29.8 .733 –34.2 .678 –37.7 .627 –40.7 .583 –42.7 .545 –44.7 .514 –46.4 .486 –47.5 .460 – ...

Page 7

... S 22 MAG ANG .998 –4.2 .986 –8.2 .975 –12.3 .955 –16.2 .937 –19.8 .916 –23.3 .893 –26.9 .865 –30.0 .836 –33.6 .807 –36.5 .781 –38.9 .755 – ...

Page 8

... S 22 MAG ANG .977 –9.5 .930 –18.3 .869 –25.8 .800 –32.3 .739 –37.5 .682 –41.9 .628 –45.8 .579 –48.8 .535 –51.8 .498 –54.0 .467 –55.9 .439 – ...

Page 9

... [MEMO] 2SC5010 9 ...

Page 10

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 8 2SC5010 M4 94.11 ...

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