UPD45128841G5-A75-9JF NEC, UPD45128841G5-A75-9JF Datasheet

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UPD45128841G5-A75-9JF

Manufacturer Part Number
UPD45128841G5-A75-9JF
Description
Manufacturer
NEC
Datasheet
Document No. M12650EJBV0DS00 (11th edition)
Date Published April 2000 NS CP (K)
Printed in Japan
Description
memories, organized as 8,388,608
Features
The PD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).
These products are packaged in 54-pin TSOP (II).
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0(A13) and BA1(A12)
Byte control ( 16) by LDQM and UDQM
Programmable Wrap sequence (Sequential / Interleave)
Programmable burst length (1, 2, 4, 8 and full page)
Programmable /CAS latency (2 and 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single 3.3 V
LVTTL compatible inputs and outputs
4,096 refresh cycles / 64 ms
Burst termination by Burst stop command and Precharge command
4, 8, 16 organization
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
0.3 V power supply
PD45128441, 45128841, 45128163
128M-bit Synchronous DRAM
4
The mark • • • • shows major revised points.
4, 4,194,304
4-bank, LVTTL
DATA SHEET
8
4, 2,097,152
MOS INTEGRATED CIRCUIT
16
4 (word
bit
bank), respectively.
©
1997

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UPD45128841G5-A75-9JF Summary of contents

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... Burst termination by Burst stop command and Precharge command The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M12650EJBV0DS00 (11th edition) ...

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Ordering Information Part number PD45128441G5-A75-9JF PD45128441G5-A80-9JF PD45128441G5-A10-9JF PD45128441G5-A10B-9JF PD45128841G5-A75-9JF PD45128841G5-A80-9JF PD45128841G5-A10-9JF PD45128841G5-A10B-9JF PD45128163G5-A75-9JF PD45128163G5-A80-9JF PD45128163G5-A10-9JF PD45128163G5-A10B-9JF 2 PD45128441, 45128841, 45128163 Organization Clock frequency (word bit bank) MHz (MAX 133 125 100 100 133 125 ...

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... Part Number [ x4 PD45128841G5 - A75 NEC Memory Synchronous DRAM Memory density 128 : 128M bits Organization Number of banks banks Interface 1 : LVTTL [ x16 ] Organization 16 : x16 Number of banks and Interface banks, LVTTL PD45128441, 45128841, 45128163 163 Data Sheet M12650EJBV0DS00 Minimum cycle time ...

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... Column address strobe /WE : Write enable DQM : DQ mask enable V : Supply voltage Ground Supply voltage for Ground for connection 4 PD45128441, 45128841, 45128163 [ PD45128441] 54-pin Plastic TSOP (II) (10.16mm (400)) 8M words 4 bits 4 banks ...

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... Row address strobe /CAS : Column address strobe /WE : Write enable DQM : DQ mask enable V : Supply voltage Ground Supply voltage for Ground for connection Data Sheet M12650EJBV0DS00 PD45128441, 45128841, 45128163 8 bits 4 banks 54 Vss 53 DQ7 52 VssQ DQ6 49 VccQ DQ5 46 ...

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... LDQM : Lower DQ mask enable UDQM : Upper DQ mask enable V : Supply voltage Ground Supply voltage for Ground for connection 6 PD45128441, 45128841, 45128163 [ PD45128163] 54-pin Plastic TSOP (II) (10.16mm (400)) 2M words 16 bits 4 banks ...

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Block Diagram CLK Clock Generator CKE Address Mode Register /CS /RAS /CAS /WE PD45128441, 45128841, 45128163 Bank D Bank C Bank B Row Address Buffer & Refresh Bank A Counter Sense Amplifier Column Decoder & Column Latch Circuit Address Buffer ...

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Input / Output Pin Function ............................................................................................................ 10 2. Commands ....................................................................................................................................... 11 3. Simplified State Diagram ................................................................................................................ 14 4. Truth Table ....................................................................................................................................... 15 4.1 Command Truth Table............................................................................................................................. 15 4.2 DQM Truth Table ...................................................................................................................................... 15 4.3 CKE Truth Table....................................................................................................................................... 15 4.4 ...

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Electrical Specifications ................................................................................................................. 34 13.1 AC Parameters for Read Timing ......................................................................................................... 39 13.2 AC Parameters for Write Timing ......................................................................................................... 41 13.3 Relationship between Frequency and Latency ................................................................................. 42 13.4 Mode Register Set ................................................................................................................................ 43 13.5 Power on Sequence and ...

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Input / Output Pin Function Pin name Input / Output CLK Input CKE Input /CS Input /RAS, /CAS, /WE Input A0 - A11 Input BA0, BA1 Input DQM, UDQM, LDQM Input DQ0 - DQ15 Input / Output V , ...

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Commands Mode register set command (/CS, /RAS, /CAS, /WE = Low) The PD45128xxx has a mode register that defines how the device operates. In this command, A0 through A11, BA0(A13) and BA1(A12) are the data input pins. After power ...

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Write command (/CS, /CAS, /WE = Low, /RAS = High) If the mode register is in the burst write mode, this command sets the burst start address given by the column address to begin the burst write operation. The first ...

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Self refresh entry command (/CS, /RAS, /CAS, CKE = Low, /WE = High) After the command execution, self refresh operation continues while CKE remains low. When CKE goes high, the PD45128xxx exits the self refresh mode. During self refresh mode, ...

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Simplified State Diagram MRS Mode Register Set Write CKE WRITE WRITE SUSPEND CKE CKE WRITEA WRITEA SUSPEND CKE Precharge POWER ON 14 PD45128441, 45128841, 45128163 Self Refresh REF IDLE Power Down CKE Active ROW Power ACTIVE CKE Down Read ...

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Truth Table 4.1 Command Truth Table Function Symbol Device deselect DESL No operation NOP Burst stop BST Read READ Read with auto precharge READA Write WRIT Write with auto precharge WRITA Bank activate ACT Precharge select bank PRE Precharge ...

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Note1 4.4 Operative Command Table Current state /CS /RAS /CAS /WE Idle ...

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Current state /CS /RAS /CAS /WE Read with auto H precharge Write with auto H precharge ...

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Current state /CS /RAS /CAS /WE Write recovering Write recovering H with auto precharge L ...

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Command Truth Table for CKE Current State CKE /CS /RAS /CAS /WE n – Self refresh Self refresh recovery ...

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Initialization The synchronous DRAM is initialized in the power-on sequence according to the following. (1) To stabilize internal circuits, when power is applied, a 100 s or longer pause must precede any signal toggling. (2) After the pause, all ...

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Programming the Mode Register The mode register is programmed by the Mode register set command using address bits A11 through A0, BA0(A13) and BA1(A12) as data inputs. The register retains data until it is reprogrammed or the device loses ...

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Mode Register BA0 BA1 (A13) (A12) A11 A10 BA0 BA1 (A13) (A12) A11 A10 BA0 BA1 (A13) (A12) A11 ...

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Burst Length and Sequence [Burst of Two] Starting address (column address A0, binary [Burst of Four] Starting address (column address A1 - A0, binary [Burst of Eight] Starting address (column address A2 - ...

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Address Bits of Bank-Select and Precharge Row (Activate command (Precharge command) Col (/CAS strobes) 24 PD45128441, 45128841, 45128163 ...

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Precharge The precharge command can be issued anytime after t Soon after the precharge command is issued, precharge operation performed and the synchronous DRAM enters the idle state after t is satisfied. The parameter t RP The earliest timing ...

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Auto Precharge During a read or write command cycle, A10 controls whether auto precharge is selected. A10 high in the Read or Write command (Read with Auto precharge command or Write with Auto precharge command), auto precharge is selected ...

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Write with Auto Precharge During a write cycle, the auto precharge starts at the timing that is equal to the value of the t data word input to the device CLK /CAS latency = 2 Command WRITA ...

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Read / Write Command Interval 11.1 Read to Read Command Interval During a read cycle, when new Read command is issued, it will be effective after /CAS latency, even if the previous read operation does not completed. READ will ...

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Write to Read Command Interval Write command and Read command interval is also 1 cycle. Only the write data before Read command will be written. The data bus must be Hi-Z at least one cycle prior to the first ...

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... Command READ DQM DQ /CAS latency = 3 Command READ DQM DQ 30 PD45128441, 45128841, 45128163 WRITE 1cycle WRITE Hi-Z is necessary Q1 Q2 Hi-Z is necessary Data Sheet M12650EJBV0DS00 Burst length = Burst length = WRITE ...

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Burst Termination There are two methods to terminate a burst operation other than using a Read or a Write command. One is the burst stop command and the other is the precharge command. 12.1 Burst Stop Command During a ...

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Precharge Termination 12.2.1 Precharge Termination in READ Cycle During a read cycle, the burst read operation is terminated by a precharge command. When the precharge command is issued, the burst read operation is terminated and precharge starts. The same ...

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Precharge Termination in WRITE Cycle During a write cycle, the burst write operation is terminated by a precharge command. When the precharge command is issued, the burst write operation is terminated and precharge starts. The same bank can be ...

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Electrical Specifications All voltages are referenced to V (GND). SS After power up, wait more than 100 s and then, execute Power on sequence and CBR (auto) Refresh before proper device operation is achieved. Absolute Maximum Ratings Parameter Voltage ...

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DC Characteristics 1 (Recommended Operating Conditions unless otherwise noted) Parameter Symbol Operating current I CC1 Precharge standby current I P CC2 in power down mode I PS CC2 Precharge standby current I N CC2 in non power down mode I ...

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DC Characteristics 2 (Recommended Operating Conditions unless otherwise noted) Parameter Symbol Input leakage current I I (L) Output leakage current I O (L) High level output voltage V OH Low level output voltage Characteristics (Recommended Operating Conditions ...

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Synchronous Characteristics Parameter Clock cycle time /CAS latency = 3 /CAS latency = 2 Access time from CLK /CAS latency = 3 /CAS latency = 2 CLK high level width CLK low level width Data-out hold time Data-out low-impedance time ...

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Asynchronous Characteristics Parameter ACT to REF/ACT command period (operation) REF to REF/ACT command period (refresh) ACT to PRE command period PRE to ACT command period Delay time ACT to READ/WRITE command ACT (one) to ACT (another) command period Data-in to ...

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CLK CKE CKS CMS CMH /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM L Hi RCD Activate Read Command Command ...

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CLK CKE CKS CMS CMH /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM L Hi RCD Activate Read with Command ...

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CLK CKE t CKS t t CMS CMH /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM Hi RCD t RRD Write with ...

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Relationship between Frequency and Latency Speed version Clock cycle time [ns] Frequency [MHz] /CAS latency [t ] RCD /RAS latency (/CAS latency + [t ]) RCD [ RC1 [t ] RAS [t ] RRD [t ...

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CLK CKE H t RSC 2 CLK (MIN.) /CS /RAS /CAS /WE BA0 BA1 A10 ADDRESS KEY ADD DQM Hi-Z DQ Precharge Mode Activate All Banks Register Set Command Command Command is valid t ...

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... BA0 BA1 A10 ADDRESS KEY ADD DQM High level is necessary Hi-Z DQ Precharge Mode CBR (Auto) All Banks Register Set Refresh Command Command Command is necessary is necessary is necessary refresh cycles are necessary CBR (Auto) Refresh Command is necessary t t RC1 RC1 Activate Command ...

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CLK CKE H /CS /RAS /CAS /WE BA0 L BA1 L A10 RAa ADD RAa CAa DQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ QAa1 QAa2 Activate Read Command Command for Bank A for Bank T10 ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank T10 T11 T12 ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ DAa1 DAa2 Activate Write 1-CLOCK Command Command SUSPENDED for Bank A for Bank ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ DAa1 DAa2 Activate Write 1-CLOCK Command Command SUSPENDED for Bank A for Bank ...

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CLK t CKSP CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank A Power Down Power Down Mode ...

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... CKE H /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM L Hi-Z DQ Precharge CBR (Auto) Refresh Command (if necessary CBR (Auto) Refresh t t RC1 RC1 Activate Read Command ...

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... T3 T4 CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM L Hi-Z DQ Precharge Self Refresh Command Entry (if necessary Self Refresh Self Refresh Self Refresh Entry Exit Exit (or Activate Command) Next Clock Enable t RC1 ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z QAa1 QAa2 DQ Activate Read Command Command for Bank A for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank T10 T11 ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RDa ADD RDa CDa DQM L Hi-Z DDa1 DDa2 DDa3 DDa4 DDb1 DDb2 DQ Activate Write Command Command for Bank D for Bank D ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RDa ADD RDa CDa DQM L Hi-Z DDa1 DDa2 DDa3 DDa4 DQ Activate Write Command Command for Bank D for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RDa ADD RDa CDa DQM L Hi-Z QDa1 QDa2 QDa3 QDa4 QDa5 QDa6 QDa7 QDa8 QBa1 QBa2 QBa3 QBa4 QBa5 DQ Activate Read Command ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RBa ADD RBa CBa L DQM Hi-Z DQ Activate Read Command Command for Bank B for Bank T10 T11 ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa L DQM Hi-Z DAa1 DAa2 DAa3 DAa4 DQ Activate Write Command Command for Bank A for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa L DQM Hi-Z DAa1 DAa2 DAa3 DAa4 DQ Activate Write Command Command for Bank A for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z QAa1 QAa2 DQ Activate Read Command Command for Bank A for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank T10 T11 ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z Aa1 Aa2 DQ Activate Read Command Command for Bank A for Bank A Activate Command ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank A Activate Command for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RBa ADD RAa CAa RBa DQM L Hi-Z Aa1 Aa2 Aa3 Aa4 DQ Activate Write Activate Command Command Command for Bank A for ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RBa ADD RAa CAa RBa DQM L Hi-Z Aa1 Aa2 Aa3 DQ Activate Write Command Command for Bank A for Bank A Activate ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z DQ Activate Activate Command Command Read for Bank A for Bank D Command Auto Precharge ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 RAa RDa A10 ADD RAa CAa RDa DQM L Hi-Z DQ Activate Activate Command Command for Bank A for Bank D Read Command for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 RAa RDa A10 ADD RAa CAa RDa DQM L Hi-Z DQ Activate Activate Command Command for Bank A for Bank D Write Write with ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z DQ Activate Activate Command Command for Bank A for Bank D Write Command for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z Aa Aa+1 DQ Activate Read Activate Command Command Command for Bank A for Bank A ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa L DQM Hi-Z DQ Activate Read Activate Command Command Command for Bank A for Bank A for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z Aa Aa+1 Aa+2 Aa-2 Aa-1 DQ Activate Write Activate Command Command Command for Bank A ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z Aa Aa+1 Aa+2 DQ Activate Write Activate Command Command Command for Bank A for Bank ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM UDQM DQ (lower) DQ (upper) Activate Read Upper Byte Command Command not Read for Bank D for Bank ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM UDQM DQ (lower) DQ (upper) Activate Read Upper Command Command Byte for Bank D for Bank D not Read ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM Hi-Z DQ Qa1 Activate Read Command Command for Bank D for Bank T10 T11 T12 T13 Qa2 ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM Hi-Z DQ Qa1 Activate Read Command Command for Bank D for Bank T10 T11 T12 T13 Qa2 ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa RDa CAa CDa CAb DQM L Hi-Z DQ QAa1 QDa1 QAb1 QAb2 QDb1 QDb2 QAc1 Activate Activate Command Command for ...

Page 80

CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa RDa CAa CDa CAb DQM L Hi-Z DQ Activate Activate Command Command for Bank D for Bank A Read Read ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa RDa CAa CDa CAb DQM L Hi-Z DAa1 DDa1 DAb1 DQ Activate Activate Command Command for Bank A for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa RDa CAa CDa CAb DQM L Hi-Z DAa1 DDa1 DAb1 DQ Activate Activate Command Command for Bank A for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RAa CAa ADD DQM L Hi-Z DAa1 DAa2 DAa3 DAa4 DQ Activate Write Command Command for Bank A for Bank A PRE Termination ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa L DQM Hi-Z DAa1 DAa2 DAa3 DQ Activate Write Command Command for Bank A for Bank A PRE Termination ...

Page 85

Package Drawing 54-PIN PLASTIC TSOP (II) (10.16 mm (400 NOTES 1. Each lead centerline is located within 0. its true position (T.P.) at maximum material condition. 2. Dimension "A" ...

Page 86

Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the PD45128xxx. Type of Surface Mount Device PD45128xxxG5 : 54-pin Plastic TSOP (II) (10.16mm (400)) 86 PD45128441, 45128841, 45128163 Data Sheet M12650EJBV0DS00 ...

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Revision History Edition / Page Date This Previous edition edition 9th edition / p.15 p.15 Mar. 1999 p.19 p.19 p.35 p.35 p.37 p.37 p.50 p.50 p.77 p.77 10th edition / Throughout Throughout Jan. 2000 p.2, 3 p.2, 3 p.34 ...

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PD45128441, 45128841, 45128163 Data Sheet M12650EJBV0DS00 ...

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PD45128441, 45128841, 45128163 Data Sheet M12650EJBV0DS00 89 ...

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PD45128441, 45128841, 45128163 Data Sheet M12650EJBV0DS00 ...

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... HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction connection is provided to the input pins possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry ...

Page 92

... Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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