BSP319 Siemens Semiconductor Group, BSP319 Datasheet

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BSP319

Manufacturer Part Number
BSP319
Description
Manufacturer
Siemens Semiconductor Group
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP319
Manufacturer:
Infineon
Quantity:
20 000
SIPMOS
• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
• V
Semiconductor Group
Type
BSP 319
Type
BSP 319
Maximum Ratings
Parameter
Continuous drain current
T
DC drain current, pulsed
T
Avalanche energy, single pulse
I
L = 6.2 mH, T
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
T
D
A
A
A
GS(th)
= 3.8 A, V
= 29 °C
= 25 °C
= 25 °C
= 1.2 ...2.0 V
®
Small-Signal Transistor
DD
j
= 25 °C
= 25 V, R
V
50 V
Ordering Code
Q67000-S273
DS
GS
I
3.8 A
D
= 25
R
0.07
Tape and Reel Information
E6327
DS(on)
1
Symbol
I
I
E
V
V
P
D
Dpuls
AS
GS
gs
tot
Package
SOT-223
Pin 1
G
Values
Pin 2
Marking
BSP 319
3.8
1.8
15
90
D
14
20
Pin 3
S
Sep-12-1996
BSP 319
Unit
A
mJ
V
W
Pin 4
D

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BSP319 Summary of contents

Page 1

SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • 1.2 ...2.0 V GS(th) Type V DS BSP 319 50 V Type Ordering Code BSP 319 Q67000-S273 Maximum Ratings Parameter Continuous ...

Page 2

Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage 7 ...

Page 5

Power dissipation tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : ...

Page 6

Typ. output characteristics parameter µ ° tot ...

Page 7

Drain-source on-resistance (on) j parameter 2 0.17 0. (on) 0.12 0.10 98% 0.08 typ 0.06 0.04 0.02 0.00 -60 - Typ. ...

Page 8

Avalanche energy parameter 3 6 100 ...

Page 9

Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 BSP 319 Sep-12-1996 ...

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