BSM181R

Manufacturer Part NumberBSM181R
DescriptionSIMOPAC Module (Power module Single switch N channel Enhancement mode)
ManufacturerSiemens Semiconductor Group
BSM181R datasheet
 


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SIMOPAC
Module
V
= 100 V
DS
I
= 200 A
D
R
= 8.5 m
DS(on)
Power module
Single switch
N channel
Enhancement mode
Package with insulated metal base plate
Package outline/Circuit diagram: 1
Type
Ordering Code
BSM 181
C67076-A1001-A2
BSM 181 R
C67076-A1016-A2
Maximum Ratings
Parameter
Drain-source voltage
R
Drain-gate voltage,
= 20 k
GS
Gate-source voltage
T
Continuous drain current,
C
Pulsed drain current,
T
= 25 ˚C
C
Operating and storage temperature range
Power dissipation,
T
= 25 ˚C
C
Thermal resistance
Chip-case
Insulation test voltage
2)
,
t
= 1 min.
Creepage distance, drain-source
Clearance, drain-source
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
1)
See chapter Package Outline and Circuit Diagrams.
2)
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
1)
Symbol
V
DS
V
DGR
V
GS
I
= 25 ˚C
D
I
D puls
T
T
,
j
stg
P
tot
R
th JC
V
is
57
BSM 181
BSM 181 R
Values
Unit
800
V
800
20
36
A
144
– 55 … + 150
˚C
700
W
K/W
0.18
2500
V
ac
16
mm
11
F
55/150/56
03.96

BSM181R Summary of contents