QM100DY-24K MITSUBISHI, QM100DY-24K Datasheet - Page 4

• Manufacturer Part Number: QM100DY-24K
• Manufacturer: MITSUBISHI

0.25
0.20
0.15
0.10
0.05
10
10
10
10
10
10
10
FORWARD BIAS SAFE OPERATING AREA
7
5
4
3
2
7
5
4
3
2
10
7
5
3
2
7
5
3
2
7
5
3
2
0
2
1
0
10
10
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
TRANSIENT THERMAL IMPEDANCE
–1
0
–3
BASE REVERSE CURRENT –I
0
CHARACTERISTIC (TRANSISTOR)
T
NON–REPETITIVE
2
2
2
C
SWITCHING TIME VS. BASE
=25°C
2
3
3
3
4
4
4
3 4 5 7
5
5
5
CURRENT (TYPICAL)
7
7
7
10
10
10
1
–2
1
TIME (s)
t
2
2
2
s
10
t
3
3
3
f
4
4
4
0
5
5
5
7
7
7
10
2 3 4 5 7
10
V
I
I
B1
C
–1
2
CC
=100A
T
T
100µs
=2A
2
2
=600V
j
j
=25°C
=125°C
50µs
3
3
B2
4
4
5
5
(A)
CE
7
7
10
(V)
10
10
1
3
0
320
280
240
200
160
120
100
10
10
10
10
80
40
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
3
2
7
5
3
2
7
5
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
CHARACTERISTICS) (TYPICAL)
20
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
0.4
COLLECTOR
DISSIPATION
400
40
HIGH POWER SWITCHING USE
60
0.8
–V
CEO
800
80
(V)
QM100DY-24K
1.2
I
100 120
B2
SECOND
BREAKDOWN
AREA
=–2A
1200
T
T
T
j
=125°C
C
1.6
j
j
=25°C
=125°C
INSULATED TYPE
( C)
140
CE
1600
160
2.0
(V)
Feb.1999