7MBR25SA140 Fuji Electric holdings CO.,Ltd, 7MBR25SA140 Datasheet - Page 2

• Manufacturer Part Number: 7MBR25SA140
• Manufacturer: Fuji Electric holdings CO.,Ltd

IGBT Module
Item
Item
Thermal resistance ( 1 device )
Contact thermal resistance
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Thermal resistance Characteristics
Electrical characteristics (Tj=25°C unless otherwise specified)
Equivalent Circuit Schematic
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
1(R)
2(S)
[Converter]
3(T)
*
21(P)
23(N)
22(P1)
7(B)
14(Gb)
I
I
V
V
C
t
t
t
t
t
V
t
I
I
V
t
t
t
t
I
V
I
R
B
24(N1)
Symbol
Symbol
Rth(j-c)
Rth(c-f)
CES
GES
on
r
r(i)
off
f
rr
CES
GES
on
r
off
f
RRM
RRM
GE(th)
CE(sat)
CE(sat)
FM
ies
F
[Brake]
20(Gu)
19(Eu)
13(Gx)
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound
V
V
V
V
V
V
I
V
R
I
I
V
V
I
V
I
V
R
V
I
V
T=25°C
T=100°C
T=25/50°C
Condition
C
F
F
C
C
F
Condition
CE
CE
CE
GE
GE
CC
GE
G
=25A
=25A
CES
CE
CC
GE
G
R
=25A
R
=25A
=15A, V
=15A
=1600V
=51
=82
=1400V
=1400V, V
=0V, V
=20V, I
=15V, Ic=25A chip
=0V, V
=0V, V
=±15V
=±15V
=800V
=800V
=1400V, V
4(U)
GE
GE
CE
GE
C
18(Gv)
12(Gy)
=25mA
17(Ev)
=15V chip
=±20V
=10V, f=1MHz
=±20V
GE
GE
=0V
[Inverter]
=0V
terminal
terminal
chip
chip
terminal
terminal
5(V)
16(Gw)
11(Gz)
15(Ew)
Min.
Min.
3305
465
5.5
Characteristics
Characteristics
6(W)
10(En)
Typ.
3000
3375
Typ.
5000
495
7MBR25SA140
7.2
2.2
2.3
0.35
0.25
0.1
0.45
0.08
2.4
2.5
2.2
2.3
0.35
0.25
0.45
0.08
1.1
1.2
0.05
8
[Thermistor]
Max.
Max.
3450
520
1.14
0.69
1.30
0.90
1.0
0.2
8.5
2.7
1.2
0.6
1.0
0.3
3.3
0.35
1.0
0.2
2.7
1.2
0.6
1.0
0.3
1.0
1.5
1.0
9
°C/W
Unit
Unit
mA
µA
V
V
pF
µs
V
µs
mA
µA
V
µs
mA
V
mA
K