SST29EE010-150-3C-PH Silicon Storage Technology, Inc, SST29EE010-150-3C-PH Datasheet

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SST29EE010-150-3C-PH

Manufacturer Part Number
SST29EE010-150-3C-PH
Description
Manufacturer
Silicon Storage Technology, Inc
Datasheet

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SST29EE010-150-3C-PH
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Part Number:
SST29EE010-150-3C-PH
Manufacturer:
SST
Quantity:
20 000
FEATURES:
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption
• Fast Page-Write Operation
PRODUCT DESCRIPTION
The 29EE010/29LE010/29VE010 are 128K x 8 CMOS
page mode EEPROMs manufactured with SST’s propri-
etary, high performance CMOS SuperFlash technology.
The split gate cell design and thick oxide tunneling
injector attain better reliability and manufacturability
compared with alternate approaches. The 29EE010/
29LE010/29VE010 write with a single power supply.
Internal Erase/Program is transparent to the user. The
29EE010/29LE010/29VE010 conform to JEDEC stan-
dard pinouts for byte-wide memories.
Featuring high performance page write, the 29EE010/
29LE010/29VE010 provide a typical byte-write time of
39 µsec. The entire memory, i.e., 128K bytes, can be
written page by page in as little as 5 seconds, when using
interface features such as Toggle Bit or Data# Polling to
indicate the completion of a write cycle. To protect
against inadvertent write, the 29EE010/29LE010/
29VE010 have on-chip hardware and software data
protection schemes. Designed, manufactured, and
tested for a wide spectrum of applications, the 29EE010/
29LE010/29VE010 are offered with a guaranteed page-
write endurance of 10
rated at greater than 100 years.
The 29EE010/29LE010/29VE010 are suited for applica-
tions that require convenient and economical updating of
program, configuration, or data memory. For all system
© 1998 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
304-04 12/97
– 5.0V-only for the 29EE010
– 3.0V-only for the 29LE010
– 2.7V-only for the 29VE010
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Current: 20 mA (typical) for 5V and
– Standby Current: 10 µA (typical)
– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-write Cycle Time:
10 mA (typical) for 3.0/2.7V
(typical)
1 Megabit (128K x 8) Page Mode EEPROM
4
or 10
SST29EE010, SST29LE010, SST29VE010
3
cycles. Data retention is
39 µs
1
• Fast Read Access Time
• Latched Address and Data
• Automatic Write Timing
• End of Write Detection
• Hardware and Software Data Protection
• TTL I/O Compatibility
• JEDEC Standard Byte-wide EEPROM Pinouts
• Packages Available
applications, the 29EE010/29LE010/29VE010 signifi-
cantly improve performance and reliability, while lower-
ing power consumption, when compared with floppy disk
or EPROM approaches. The 29EE010/29LE010/
29VE010 improve flexibility while lowering the cost for
program, data, and configuration storage applications.
To meet high density, surface mount requirements, the
29EE010/29LE010/29VE010 are offered in 32-pin
TSOP and 32-lead PLCC packages. A 600-mil, 32-pin
PDIP package is also available. See Figures 1 and 2 for
pinouts.
Device Operation
The SST page mode EEPROM offers in-circuit electrical
write capability. The 29EE010/29LE010/29VE010 does
not require separate erase and program operations. The
internally timed write cycle executes both erase and
program transparently to the user. The 29EE010/
29LE010/29VE010 have industry standard optional
Software Data Protection, which SST recommends al-
ways to be enabled. The 29EE010/29LE010/29VE010
are compatible with industry standard EEPROM pinouts
and functionality.
Read
The Read operations of the 29EE010/29LE010/
29VE010 are controlled by CE# and OE#, both have to
be low for the system to obtain data from the outputs.
CE# is used for device selection. When CE# is high, the
– 5.0V-only operation: 90 and 120 ns
– 3.0V-only operation: 150 and 200 ns
– 2.7V-only operation: 200 and 250 ns
– Internal V
– Toggle Bit
– Data# Polling
– 32-Pin TSOP (8x20 & 8x14 mm)
– 32-Lead PLCC
– 32 Pin Plastic DIP
pp
Generation
Data Sheet
5
6
7
8
13
14
15
16
1
2
3
4
9
10
11
12

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SST29EE010-150-3C-PH Summary of contents

Page 1

... Megabit (128K x 8) Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the 29EE010 – 3.0V-only for the 29LE010 – 2.7V-only for the 29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • ...

Page 2

... The data bus is in high impedance state when either CE# or OE# is high. Refer to the read cycle timing diagram for further details (Figure 3). Write The Page Write to the SST29EE010/29LE010/29VE010 should always use the JEDEC Standard Software Data Protection (SDP) 3-byte command sequence. The 29EE010/29LE010/29VE010 contain the optional JEDEC approved Software Data Protection scheme ...

Page 3

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Write Operation Status Detection The 29EE010/29LE010/29VE010 provide two software means to detect the completion of a write cycle, in order to optimize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ and Toggle Bit (DQ ) ...

Page 4

... OE# WE# © 1998 Silicon Storage Technology, Inc. 1 Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 multiple manufacturers in the same socket. For details, see Table 3 for hardware operation or Table 4 for software operation, Figure 10 for the software ID entry and read timing diagram and Figure 17 for the ID entry command sequence flowchart ...

Page 5

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 A11 A9 A8 A13 A14 NC WE# Vcc NC A16 A15 A12 32- IGURE IN SSIGNMENTS FOR NC 1 A16 2 A15 3 A12 32-Pin PDIP A4 8 Top View DQ0 13 DQ1 ...

Page 6

... SST Manufacturer Code = BFH, is read with 29EE010 Device Code = 07H, is read with A 29LE010/29VE010 Device Code = 08H, is read with A 2. The device does not remain in Software Product ID Mode if powered down. © 1998 Silicon Storage Technology, Inc. SST29EE010, SST29LE010, SST29VE010 OE# WE ...

Page 7

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. ...

Page 8

... Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH V Supervoltage for Supervoltage Current H for A 9 © 1998 Silicon Storage Technology, Inc. SST29EE010, SST29LE010, SST29VE010 V = 5V±10% HARACTERISTICS CC Limits Min Max Units µA 1 µA 10 µ ...

Page 9

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 ABLE OWER UP IMINGS Symbol Parameter (1) T Power-up to Read Operation PU-READ (1) T Power-up to Write Operation PU-WRITE °C, f=1 MHz, other pins open) ABLE APACITANCE a Parameter Description (1) C I/O Pin Capacitance I/O (1) C Input Capacitance ...

Page 10

... OE# Low to Active Output OLZ (1) T CE# High to High-Z Output CHZ (1) T OE# High to High-Z Output OHZ (1) T Output Hold from Address Change OH © 1998 Silicon Storage Technology, Inc. 1 Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 P ARAMETERS 29EE010-90 Min ARAMETERS 29LE010-150 Min 150 0 0 ...

Page 11

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 T 13 ABLE AGE RITE YCLE IMING Symbol Parameter T Write Cycle (erase and program Address Setup Time AS T Address Hold Time AH T WE# and CE# Setup Time CS T WE# and CE# Hold Time CH T OE# High Setup Time ...

Page 12

... IGURE EAD YCLE IMING IAGRAM IGURE ONTROLLED AGE © 1998 Silicon Storage Technology, Inc. SST29EE010, SST29LE010, SST29VE010 RITE YCLE IMING IAGRAM 12 1 Megabit Page Mode EEPROM 304 AC F03.0 304 AC F04.0 304-04 12/97 ...

Page 13

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 IGURE ONTROLLED AGE IGURE ATA OLLING IMING © 1998 Silicon Storage Technology, Inc RITE YCLE IMING IAGRAM IAGRAM 304 AC F05 ...

Page 14

... IGURE OGGLE IT IMING IAGRAM IGURE OFTWARE ATA ROTECT © 1998 Silicon Storage Technology, Inc. SST29EE010, SST29LE010, SST29VE010 ISABLE IMING IAGRAM 14 1 Megabit Page Mode EEPROM 304 AC F07.0 304 AC F08.0 304-04 12/97 ...

Page 15

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 IGURE OFTWARE HIP RASE F 10 IGURE OFTWARE NTRY AND © 1998 Silicon Storage Technology, Inc. D IMING IAGRAM DEVICE CODE = 07 for 29EE010 R EAD 15 304 AC F09 for 29LE010/29VE010 304 AC F10.0 304-04 12/ ...

Page 16

... F 11 IGURE OFTWARE XIT AND © 1998 Silicon Storage Technology, Inc. SST29EE010, SST29LE010, SST29VE010 R ESET 16 1 Megabit Page Mode EEPROM 304 AC F11.0 304-04 12/97 ...

Page 17

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 2.4 INPUT 0.4 AC test inputs are driven points for inputs and outputs are V ns IGURE NPUT UTPUT EFERENCE TO DUT F 13 IGURE EST OAD XAMPLE © 1998 Silicon Storage Technology, Inc. ...

Page 18

... See Figure 16 Figure 14: Write Algorithm F 14 IGURE RITE LGORITHM © 1998 Silicon Storage Technology, Inc. 1 Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Start Software Data Software Data Protect Write Protect Write Command Command Set Page Address Set Byte Address = 0 Load Byte ...

Page 19

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Internal Timer Page Write Initiated Wait T WC Write Completed F 15 IGURE AIT PTIONS © 1998 Silicon Storage Technology, Inc. Toggle Bit Page Write Initiated Read a byte from page Read same byte No Does DQ 6 match? ...

Page 20

... BLCO Wait T SDP Enabled F 16 IGURE OFTWARE ATA ROTECTION © 1998 Silicon Storage Technology, Inc. SST29EE010, SST29LE010, SST29VE010 Software Data Protect Disable Command Sequence Optional Page Load Operation WC F LOWCHARTS 20 1 Megabit Page Mode EEPROM Write data: AA Address: 5555 Write data: 55 ...

Page 21

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Software Product ID Entry Command Sequence Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 90 Address: 5555 Pause 10 s Read Software IGURE OFTWARE RODUCT OMMAND © 1998 Silicon Storage Technology, Inc. ...

Page 22

... F 18 IGURE OFTWARE HIP RASE © 1998 Silicon Storage Technology, Inc. SST29EE010, SST29LE010, SST29VE010 Software Chip-Erase Command Sequence Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 80 Address: 5555 Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 10 ...

Page 23

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 PRODUCT ORDERING INFORMATION Device Speed Suffix1 SST29XE010 - XXX - XX © 1998 Silicon Storage Technology, Inc. Suffix2 - XX 23 Package Modifier leads Numeric = Die modifier Package Type P = PDIP N = PLCC E = TSOP (die up) 8x20 TSOP (die up) 8x14 mm ...

Page 24

... Note: The software chip erase function is not supported by the industrial temperature part. Please contact SST, if you require this function for an industrial temperature part. © 1998 Silicon Storage Technology, Inc. 1 Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 SST29EE010- 90-4C- PH SST29EE010-120-4C- PH SST29LE010-150-4C- PH SST29LE010-200-4C- PH SST29VE010-200-4C- PH ...

Page 25

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 PACKAGING DIAGRAMS Note: 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches. 32 EAD ...

Page 26

... Note: 1. Complies with JEDEC publication 95 MO-142 BD dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in metric (min/max). 3. Coplanarity: 0.1 (±.05) mm. 32 EAD HIN MALL UTLINE ACKAGE SST ACKAGE ODE © 1998 Silicon Storage Technology, Inc. 1 Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 (TSOP) (TSOP) 26 32pn TSOP WH AC.3 32pn TSOP EH AC.4 304-04 12/97 ...

Page 27

... Megabit Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 SST Area Offices U.S.A. - California (408) 523-7722 U.S.A. - Florida (813) 771-8819 U.S.A. - Florida (941) 505-8893 U.S.A. - Massachusetts (978) 356-3845 Japan - Yokohama (81) 45-471-1851 Europe - UK (44) 1784-490455 North American Sales Representatives Alabama Elcom, Inc. (205) 830-4001 Arizona QuadRep, Inc. (602) 839-2102 ...

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