SST29EE010-120-4C-EH SST [Silicon Storage Technology, Inc], SST29EE010-120-4C-EH Datasheet
SST29EE010-120-4C-EH
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SST29EE010-120-4C-EH Summary of contents
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... The internally timed write cycle executes both erase and program transparently to the user. The SST29EE010/29LE010/29VE010 have industry stan- dard optional Software Data Protection, which SST recommends always to be enabled. The SST29EE010/ 29LE010/29VE010 are compatible with industry stan- dard EEPROM pinouts and functionality. 4 cycles ...
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... During the Write operation, the only valid reads are Data# Polling and Toggle Bit. The Page-Write operation allows the loading 128 bytes of data into the page buffer of the SST29EE010/ 29LE010/29VE010 before the initiation of the internal write cycle. During the internal write cycle, all the data in the page buffer is written simultaneously into the memory array ...
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... Write cycle, otherwise the rejection is valid. Data# Polling ( When the SST29EE010/29LE010/29VE010 are in the internal write cycle, any attempt to read DQ byte loaded during the byte-load cycle will receive the complement of the true data. Once the Write cycle is completed, DQ will show true data ...
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... Address Buffer & Latches CE# OE# WE# © 2000 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 multiple manufacturers in the same socket. For details, see Table 3 for hardware operation or Table 4 for software operation, Figure 10 for the software ID entry and read timing diagram and Figure 17 for the ID entry command sequence flowchart ...
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... Data is internally latched during a Write cycle. The outputs are in tri-state when OE# or CE# is high. To activate the device when CE# is low. To gate the data output buffers. To control the Write operations To provide 5-volt supply (± 10%) for the SST29EE010, 3-volt supply (3.0-3.6V) for the SST29LE010 and 2.7-volt supply (2.7-3.6V) for the SST29VE010 Unconnected pins. 5 ...
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... SST Manufacturer ID = BFH, is read with SST29EE010 Device ID = 07H, is read with A SST29LE010/29VE010 Device ID = 08H, is read with A 2. The device does not remain in Software Product ID Mode if powered down. 3. This device supports both the JEDEC standard three-byte command code sequence and SST’s original six-byte command code sequence. For new designs, SST recommends the three-byte command code sequence be used. © ...
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... Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. ...
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... V Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH V Supervoltage for Supervoltage Current H for A 9 © 2000 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 5V±10% HARACTERISTICS CC Limits Min Max Units µA 1 µA 10 µ ...
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... Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 ABLE OWER UP IMINGS Symbol Parameter (1) T Power-up to Read Operation PU-READ (1) T Power-up to Write Operation PU-WRITE °C, f=1 MHz, other pins open) ABLE APACITANCE a Parameter Description (1) C I/O Pin Capacitance I/O (1) C Input Capacitance IN (1) Note: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter ...
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... OE# Low to Active Output OLZ (1) T CE# High to High-Z Output CHZ (1) T OE# High to High-Z Output OHZ (1) T Output Hold from Address Change OH © 2000 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 T P IMING ARAMETERS SST29EE010-90 SST29EE010-120 Min IMING ARAMETERS SST29LE010-150 SST29LE010-200 Min 150 ...
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... Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 T 13 ABLE AGE RITE YCLE IMING Symbol Parameter T Write Cycle (Erase and Program Address Setup Time AS T Address Hold Time AH T WE# and CE# Setup Time CS T WE# and CE# Hold Time CH T OE# High Setup Time ...
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... CE# OE# WE SW0 SW1 IGURE ONTROLLED AGE © 2000 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 OLZ T CLZ DATA VALID 5555 OES T OEH BLC DATA VALID ...
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... Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Three-Byte Sequence for Enabling SDP ADDRESS A 16-0 5555 2AAA CE# OE# WE SW0 SW1 IGURE ONTROLLED AGE ADDRESS A 16-0 CE# OE# WE IGURE ATA OLLING IMING © 2000 Silicon Storage Technology, Inc. ...
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... DQ 7-0 AA CE# OE WE# SW0 IGURE OFTWARE ATA ROTECT © 2000 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 BLCO Six-Byte Sequence for Disabling Software Data Protection 2AAA 5555 5555 2AAA BLC SW1 SW2 SW3 ...
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... BLC SW1 SW2 SW3 SW4 D IAGRAM 5555 0000 IDA T BLC DEVICE for SST29EE010 SW1 SW2 = 08 for SST29LE010/29VE010 R EAD 15 T SCE 5555 10 T BLCO SW5 304 ILL F09.1 0001 DEVICE ID 304 ILL F10 ...
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... Software ID Exit and Reset ADDRESS A 14-0 5555 DQ 7-0 AA CE# OE WE# SW0 F 11 IGURE OFTWARE XIT AND © 2000 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 2AAA 5555 IDA T BLC SW1 SW2 R ESET 16 1 Megabit Page-Mode EEPROM 304 ILL F11.0 304-3 6/00 ...
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... Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 V IHT INPUT V ILT AC test inputs are driven at V (2.4 V) for a logic “1” and V IHT inputs and outputs are V (2.0 V) and 12 IGURE NPUT UTPUT EFERENCE TO DUT F 13 IGURE EST OAD XAMPLE © ...
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... See Figure IGURE RITE LGORITHM © 2000 Silicon Storage Technology, Inc. 1 Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Start Software Data Protect Write Command Set Page Address Set Byte Address = 0 Load Byte Data Increment Byte Address By 1 Byte No Address = 128? ...
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... Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Internal Timer Page-Write Initiated Wait T WC Write Completed F 15 IGURE AIT PTIONS © 2000 Silicon Storage Technology, Inc. Toggle Bit Page-Write Initiated Read a byte from page Read same byte No Does DQ 6 match? Yes Write ...
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... F 16 IGURE OFTWARE ATA ROTECTION © 2000 Silicon Storage Technology, Inc. 1 Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Software Data Protect Disable Command Sequence Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 80 Address: 5555 Optional Page Load Write data: AA ...
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... Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Software Product ID Entry Command Sequence Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 90 Address: 5555 Pause 10 µs Read Software IGURE OFTWARE RODUCT OMMAND © 2000 Silicon Storage Technology, Inc. Software Product ID Exit & ...
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... IGURE OFTWARE HIP RASE OMMAND © 2000 Silicon Storage Technology, Inc. 1 Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Software Chip-Erase Command Sequence Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 80 Address: 5555 Write data: AA Address: 5555 Write data: 55 ...
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... Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 PRODUCT ORDERING INFORMATION Device Speed Suffix1 SST29xE010 - XXX - XX © 2000 Silicon Storage Technology, Inc. Suffix2 - XX Package Modifier Package Type Operating Temperature Minimum Endurance Read Access Speed Voltage leads Numeric = Die modifier P = PDIP N = PLCC E = TSOP (die up) 8mm x 20mm ...
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... SST29EE010 Valid combinations SST29EE010-90-4C-EH SST29EE010-90-4C-NH SST29EE010-120-4C-EH SST29EE010-120-4C-NH SST29EE010-90-4C-WH SST29EE010-120-4C-WH SST29EE010-90-4I-EH SST29EE010-90-4I-NH SST29EE010-120-4C-U2 SST29LE010 Valid combinations SST29LE010-150-4C-EH SST29LE010-150-4C-NH SST29LE010-150-4I-EH SST29LE010-150-4I-NH SST29LE010-200-4C-U2 SST29VE010 Valid combinations SST29VE010-200-4C-EH SST29VE010-200-4C-NH SST29VE010-200-4I-EH SST29VE010-200-4I-NH SST29VE010-250-4C-U2 Example:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations ...
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... Megabit Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 PACKAGING DIAGRAMS .065 .075 Base Plane Seating Plane .015 .050 .070 .080 Note: 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches. ...
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... ACKAGE SST ACKAGE ODE Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 www.SuperFlash.com or www.ssti.com • Literature FaxBack 888-221-1178, International 732-544-2873 © 2000 Silicon Storage Technology, Inc. SST29EE010 / SST29LE010 / SST29VE010 8.10 7.90 12.50 12.30 14.20 13.80 (TSOP ...