SST39VF1602C704CEKE Silicon Storage Technology, Inc, SST39VF1602C704CEKE Datasheet

SST39VF1602C704CEKE

Manufacturer Part Number

SST39VF1602C704CEKE

Description

SST

Manufacturer

Silicon Storage Technology, Inc

Datasheet

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FEATURES:

• Organized as 1M x16: SST39VF1601C/1602C

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption (typical values at 5 MHz)

• Hardware Block-Protection/WP# Input Pin

• Sector-Erase Capability

• Block-Erase Capability

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

• Latched Address and Data

PRODUCT DESCRIPTION

The SST39VF1601C and SST39VF1602C devices are

1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manu-

factured with SST proprietary, high performance CMOS

SuperFlash technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST39VF160xC writes (Program or Erase) with a

2.7-3.6V power supply. These devices conform to JEDEC

standard pinouts for x16 memories.

Featuring

SST39VF1601C/1602C devices provide a typical Word-

Program time of 7 µsec. These devices use Toggle Bit,

Data# Polling, or the RY/BY# pin to indicate the completion

of Program operation. To protect against inadvertent write,

they have on-chip hardware and Software Data Protection

schemes. Designed, manufactured, and tested for a wide

spectrum of applications, these devices are offered with a

guaranteed typical endurance of 100,000 cycles. Data

retention is rated at greater than 100 years.

The SST39VF1601C/1602C devices are suited for applica-

tions that require convenient and economical updating of

program, configuration, or data memory. For all system

applications, they significantly improve performance and

S71380-03-000

– 2.7-3.6V

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

– Active Current: 9 mA (typical)

– Standby Current: 3 µA (typical)

– Auto Low Power Mode: 3 µA (typical)

– Top Block-Protection (top 8 KWord)

– Bottom Block-Protection (bottom 8 KWord)

– Uniform 2 KWord sectors

– Flexible block architecture; one 8-, two 4-, one

16-, and thirty one 32-KWord blocks

high

16 Mbit (x16) Multi-Purpose Flash Plus

SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories

performance

08/09

SST39VF1601C / SST39VF1602C

Word-Program,

http://store.iiic.cc/

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Security-ID Feature

• Fast Read Access Time:

• Fast Erase and Word-Program:

• Automatic Write Timing

• End-of-Write Detection

• CMOS I/O Compatibility

• JEDEC Standard

• Packages Available

• All non-Pb (lead-free) devices are RoHS compliant

reliability, while lowering power consumption. They inher-

ently use less energy during Erase and Program than alter-

native flash technologies. The total energy consumed is a

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. These devices also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles.

To meet high density, surface mount requirements, the

SST39VF1601C/1602C are offered in 48-lead TSOP and

48-ball TFBGA packages. See Figures 2 and 3 for pin

assignments.

– SST: 128 bits; User: 128 words

– 70 ns

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 µs (typical)

– Internal V

– Toggle Bits

– Data# Polling

– Ready/Busy# Pin

– Flash EEPROM Pinouts and command sets

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

Generation

These specifications are subject to change without notice.

MPF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

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