MMBT9015

Manufacturer Part NumberMMBT9015
ManufacturerUnisonic Technologies
MMBT9015 datasheet
 


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UTC MMBT9015
PNP EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL &
LOW NOISE
FEATURES
*High total power dissipation. (450mW)
*Excellent hFE linearity.
*Complementary to UTC MMBT9014
MARKING
15
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Output Capacitance
Current gain-Bandwidth Porduct
Noise Figure
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1: EMITTER 2: BASE 3: COLLECTOR
(Ta=25°C, unless otherwise specified)
SYMBOL
RATING
V
-50
CBO
V
-45
CEO
V
-5
EBO
Ic
-100
Pc
225
T
150
j
T
-55 ~ +150
STG
(Ta=25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
BV
Ic=-100µA, I
=0
CBO
E
BV
Ic=-1mA, I
=0
CEO
B
BV
I
=-100µA, Ic=0
EBO
E
I
V
=-50V, I
=0
CBO
CB
E
I
V
=-5V, I
=0
EBO
EB
C
hFE
V
=-5V, Ic=-1mA
CE
V
(sat)
Ic=-100mA, I
=-5mA
CE
B
V
(sat)
Ic=-100mA, I
=-5mA
BE
B
V
(on)
V
=-5V, Ic=-2mA
BE
CE
Cob
V
=-10V, I
=0, f=1MHz
CB
E
fT
V
=-5V, Ic=-10mA
CE
NF
V
=-5V, Ic=-0.2mA
CE
f=1KHz, Rs=1KΩ
2
1
3
SOT-23
UNIT
V
V
V
mA
mW
°C
°C
MIN
TYP
MAX
UNIT
-50
V
-45
V
-5
V
-50
nA
-100
nA
60
200
600
-0.2
-0.7
V
-0.82
-1.0
V
-0.6
-0.65
-0.75
V
4.5
7.0
pF
100
190
MHz
0.7
10
dB
1
QW-R206-023,A