HY62256ALP-70 HEI, HY62256ALP-70 Datasheet
HY62256ALP-70
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HY62256ALP-70 Summary of contents
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Data Sheet-sram/62256ald1 HY62256A-(I) Series 32Kx8bit CMOS SRAM Description Features · The HY62256A/HY62256A-I · high-speed, low power and 32,786 x 8-bits · CMOS Static Random Access Memory fabricated using · Hyundai's high performance CMOS process technology. ...
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Data Sheet-sram/62256ald1 Product No. HY62256A 5.0 HY62256A-I 5.0 Note Extended Temperature, Normal: Normal Temperature 2. Current value is max. SRAM Data Sheets Voltage Speed Operation (V) (ns) Current(mA) 55/70/85 50 55/70/85 50 Features | ...
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HYUNDAI ELECTRONICS AMERICA HY62256A-(I) Series 32Kx8bit CMOS SRAM PIN CONNECTION BLOCK DIAGRAM PIN DESCRIPTION Pin Name /CS /WE /OE A0-A14 I/O1-I/O8 Vcc Vss Chip Select Write Enable Output Enable Address Inputs Data Input/Output Power(+5.0V) Ground Features ...
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SRAM Data Sheets Phone: 408-232-8000 URL: http://www.hea.com/ | Memory Products | email: DRAMSRAMmemory@hea.com Copyright © 1997 Hyundai Electronics America. http://www.hea.com/hean2/sram/62256alp1.htm 22/10/97 12:32 ...
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HYUNDAI ELECTRONICS AMERICA HY62256A-(I) Series 32Kx8bit CMOS SRAM ABSOLUTE MAXIMUM RATING (1) Symbol OUT STG OUT T SOLDER Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM ...
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TRUTH TABLE /CS / Note: 1. H CHARACTERISTICS Vcc = specified Symbol I Input Leakage Current LI I Output Leakage Current LO Operating Power ...
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AC CHARACTERISTICS Vcc = 5V(±)10%, T specified. # Symbol READ CYCLE 1 tRC 2 tAA 3 tACS 4 tOE 5 tCLZ 6 tOLZ 7 tCHZ 8 tOHZ 9 tOH WRITE CYCLE 10 tWC 11 tCW 12 tAW 13 tAS ...
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AC TEST LOADS CAPACITANCE ° 1.0MHz A Symbol I/O Note: These parameters are sampled and not 100% tested SRAM Data Sheets Note: Including jig and scope capacitance Parameter ...
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HYUNDAI ELECTRONICS AMERICA HY62256A-I 32K x 8bit CMOS SRAM TIMING DIAGRAM READ CYCLE 1 Note (READ CYCLE and t CHZ circuit conditions and are not referenced to output voltage levels any given temperature and voltage ...
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WRITE CYCLE 2 (/OE Low Fixed) Notes (WRlTE CYCLE write occurs during the overlap of a low /CS and a low /WE. A write begins at the latest transition among /CS going low and /WE going low: ...
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DATA RETENTION CHARACTERISTIC T = 0°C to 70°C (normal) /-40°C to 85°C (E.T.) A Symbol V Vcc for Data Re! ention DR Data I Retention CCDR Current Chip Disable to Data Retention tCDR Time tR Operating Recovery Time Notes ...
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HYUNDAI ELECTRONICS AMERICA HY62256A-(I) Series 32Kx8bit CMOS SRAM 28pin 600mil Dual In-Line Package(P) 28pin 330mil Small Outline Package(J) 28pin 8X13.4mm Thin Small Outline Package Standard(T1 http://www.hea.com/hean2/sram/62256alpk1.htm PACKAGE INFORMATION 22/10/97 12:37 ...
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Thin Small Outline Package SReversed(R1) SRAM Data Sheets Features | Pins | Ratings | Timing 3101 North First Street, San Jose, CA 95134 Phone: 408-232-8000 URL: http://www.hea.com/ | Memory Products | email: DRAMSRAMmemory@hea.com Copyright ...
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... HYUNDAI ELECTRONICS AMERICA HY62256A-(I) Series 32Kx8bit CMOS SRAM Part No. HY62256AP HY62256ALP HY62256ALLP HY62256AJ HY62256ALJ HY62256ALLJ HY62256AT1 HY62256ALT1 HY62256ALLT1 HY62256AR1 HY62256ALR1 HY62256ALLR1 HY62256AP-I HY62256ALP-I HY62256AJ-I HY62256ALJ-I HY62256AT1-I HY62256ALT1-I HY62256AR2-I HY62256ALR2-I SRAM Data Sheets Speed Power 55/70/85 55/70/85 L-part 55/70/85 LL-part 55/70/85 55/70/85 L-part 55/70/85 LL-part 55/70/85 55/70/85 L-part ...