ATtiny167 Atmel Corporation, ATtiny167 Datasheet - Page 217

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ATtiny167

Manufacturer Part Number
ATtiny167
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of ATtiny167

Flash (kbytes)
16 Kbytes
Pin Count
20
Max. Operating Frequency
16 MHz
Cpu
8-bit AVR
# Of Touch Channels
8
Hardware Qtouch Acquisition
No
Max I/o Pins
16
Ext Interrupts
16
Usb Speed
No
Usb Interface
No
Spi
2
Twi (i2c)
1
Uart
1
Lin
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
11
Adc Resolution (bits)
10
Adc Speed (ksps)
15
Analog Comparators
1
Resistive Touch Screen
No
Temp. Sensor
Yes
Crypto Engine
No
Sram (kbytes)
0.5
Eeprom (bytes)
512
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8 to 5.5
Operating Voltage (vcc)
1.8 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
2
Output Compare Channels
3
Input Capture Channels
1
Pwm Channels
9
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes

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20. Flash Programming
20.1
20.1.1
20.1.2
8265B–AVR–09/10
Self-Programming the Flash
Performing Page Erase by SPM
Filling the Temporary Buffer (Page Loading)
The device provides a Self-Programming mechanism for downloading and uploading program
code by the MCU itself. The Self-Programming can use any available data interface (i.e. LIN,
USART, ...) and associated protocol to read code and write (program) that code into the Pro-
gram memory.
The Program memory is updated in a page by page fashion. Before programming a page with
the data stored in the temporary page buffer, the page must be erased. The temporary page
buffer is filled one word at a time using SPM and the buffer can be filled either before the Page
Erase command or between a Page Erase and a Page Write operation:
If only a part of the page needs to be changed, the rest of the page must be stored (for exam-
ple in the temporary page buffer) before the erase, and then be re-written. When using
alternative 1, the Boot Loader provides an effective Read-Modify-Write feature which allows
the user software to first read the page, do the necessary changes, and then write back the
modified data. If alternative 2 is used, it is not possible to read the old data while loading since
the page is already erased. The temporary page buffer can be accessed in a random
sequence. It is essential that the page address used in both the Page Erase and Page Write
operation is addressing the same page.
To execute Page Erase, set up the address in the Z-pointer, write “00000011
and execute SPM within four clock cycles after writing SPMCSR. The data in R1 and R0 is
ignored. The page address must be written to PCPAGE in the Z-register. Other bits in the
Z-pointer will be ignored during this operation.
To write an instruction word, set up the address in the Z-pointer and data in R1:R0, write
“00000001
The content of PCWORD in the Z-register is used to address the data in the temporary buffer.
The temporary buffer will auto-erase after a Page Write operation or by writing the CTPB bit in
SPMCSR. It is also erased after a system reset. Note that it is not possible to write more than
one time to each address without erasing the temporary buffer.
If the EEPROM is written in the middle of an SPM Page Load operation, all data loaded will be
lost.
• Alternative 1, fill the buffer before a Page Erase
• Alternative 2, fill the buffer after Page Erase
• The CPU is halted during the Page Erase operation.
– Fill temporary page buffer
– Perform a Page Erase
– Perform a Page Write
– Perform a Page Erase
– Fill temporary page buffer
– Perform a Page Write
b
” to SPMCSR and execute SPM within four clock cycles after writing SPMCSR.
b
” to SPMCSR
217

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