BTA202X-600D NXP Semiconductors, BTA202X-600D Datasheet - Page 3

• Manufacturer Part Number: BTA202X-600D
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BTA202X_SER_D_E_1
Product data sheet
Symbol
P
T
T
Fig 1.
Fig 2.
G(AV)
stg
j
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/ s.
I
(A)
TSM
P
(W)
tot
20
16
12
8
4
0
3
2
1
0
1
0
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
Limiting values
= conduction angle
conduction
Parameter
average gate power
storage temperature
junction temperature
(degrees)
angle
120
180
30
60
90
factor
form
1.57
2.8
2.2
1.9
a
4
0.4
…continued
10
0.8
Rev. 01 — 7 February 2008
Conditions
over any 20 ms period
1.2
BTA202X series D and E
2 A Three-quadrant triacs high commutation
10
2
1.6
I
T(RMS)
number of cycles
Min
-
-
I
T
(A)
40
T
j(init)
1/f
= 25 C max
2
© NXP B.V. 2008. All rights reserved.
Max
+150
0.5
125
003aac112
003aac110
= 180
I
120
TSM
90
60
30
t
10
3
Unit
W
C
C
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