BTA202X-600D NXP Semiconductors, BTA202X-600D Datasheet - Page 7

• Manufacturer Part Number: BTA202X-600D
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Dynamic characteristics
Table 7.
BTA202X_SER_D_E_1
Product data sheet
Symbol Parameter
dV
dI
t
gt
Fig 7.
com
V
D
GT(25 C)
/dt
V
/dt rate of change of
GT
1.6
1.2
0.8
0.4
rate of rise of
off-state voltage
commutating
current
gate-controlled
turn-on time
50
Normalized gate trigger voltage as a function
of junction temperature
Dynamic characteristics
0
Conditions
V
exponential waveform; R
V
dV
V
dV
I
dI
TM
50
DM
DM
DM
G
com
com
/dt = 5 A/ s
= 20 A; V
= 0.67
= 400 V; T
= 400 V; T
/dt = 20 V/ s; gate open circuit
/dt = 10 V/ s; gate open circuit
100
D
V
001aab101
T
= V
DRM(max)
j
j
j
= 125 C; I
= 125 C; I
( C)
DRM(max)
Rev. 01 — 7 February 2008
150
; T
(G-MT1)
j
; I
= 125 C;
T(RMS)
T(RMS)
G
= 0.1 A;
= 220
= 2 A;
= 2 A;
Fig 8.
I
GT(25 C)
BTA202X series D and E
I
GT
(1) T2 G
(2) T2+ G
(3) T2+ G+
2
1
3
0
2 A Three-quadrant triacs high commutation
50
Normalized gate trigger current as a function
of junction temperature
(1)
(2)
(3)
Min
1.0
1.2
BTA202X-600D
BTA202X-800D
-
-
0
Typ
350
2
-
-
Max
-
-
-
-
50
Min
2.0
2.3
BTA202X-600E
BTA202X-800E
-
-
100
© NXP B.V. 2008. All rights reserved.
Typ
500
003aaa959
T
j
2
-
-
( C)
(3)
(2)
(1)
150
Max
-
-
-
-
7 of 12
Unit
V/ s
A/ms
A/ms
s