BZV55_SER NXP Semiconductors, BZV55_SER Datasheet - Page 3

Low-power voltage regulator diodes in small hermetically sealed glass SOD80CSurface-Mounted Device (SMD) packages

BZV55_SER

Manufacturer Part Number
BZV55_SER
Description
Low-power voltage regulator diodes in small hermetically sealed glass SOD80CSurface-Mounted Device (SMD) packages
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
7. Characteristics
BZV55_SER
Product data sheet
Fig 1.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−1
δ = 1
≤ 0.001
0.50
0.33
0.20
0.75
0.10
0.05
0.02
0.01
Table 7.
T
Symbol
V
I
R
j
F
1
= 25
C unless otherwise specified.
Parameter
forward voltage
reverse current
Characteristics
BZV55-B/C2V4
BZV55-B/C2V7
BZV55-B/C3V0
BZV55-B/C3V3
BZV55-B/C3V6
BZV55-B/C3V9
BZV55-B/C4V3
BZV55-B/C4V7
BZV55-B/C5V1
BZV55-B/C5V6
BZV55-B/C6V2
BZV55-B/C6V8
BZV55-B/C7V5
BZV55-B/C8V2
BZV55-B/C9V1
BZV55-B/C10
BZV55-B/C11
BZV55-B/C12
BZV55-B/C13
BZV55-B/C15 to BZV55-B/C75
All information provided in this document is subject to legal disclaimers.
10
Rev. 5 — 26 January 2011
10
2
Conditions
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
F
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
= 10 mA
= 1 V
= 1 V
= 1 V
= 1 V
= 1 V
= 1 V
= 1 V
= 2 V
= 2 V
= 2 V
= 4 V
= 4 V
= 5 V
= 5 V
= 6 V
= 7 V
= 8 V
= 8 V
= 8 V
= 0.7V
10
3
Z(nom)
BZV55 series
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
Voltage regulator diodes
4
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
t
p
© NXP B.V. 2011. All rights reserved.
(ms)
006aab072
Max
0.9
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
10
5
V
nA
nA
nA
nA
nA
nA
Unit
A
A
A
A
A
A
A
A
A
A
A
A
A
nA
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