PSMN013-100XS NXP Semiconductors, PSMN013-100XS Datasheet
PSMN013-100XS
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PSMN013-100XS Summary of contents
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... PSMN013-100XS N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 1 — 13 December 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... T pulsed ° ° 35 j(init) D ≤ 100 V; unclamped Ω; see V sup GS All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 December 2011 PSMN013-100XS Graphic symbol mbb076 Version SOT186A Min Max - 100 - 100 - 35 ...
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... Fig ( All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 December 2011 PSMN013-100XS 100 150 Normalized total power dissipation as a function of mounting base temperature 003aag602 (1) ( (ms) AL 03aa16 200 T (° ...
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... PSMN013-100XS Preliminary data sheet N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A) Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 December 2011 PSMN013-100XS 003aag603 =10 μ 100 μ 100 ...
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... Conditions MHz 50 Hz ≤ f ≤ 60 Hz; RH ≤ sinusoidal waveform; clean and dust free All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 December 2011 PSMN013-100XS Min Typ Figure ...
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... MHz °C; see Figure 16; j see Figure Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 December 2011 PSMN013-100XS Min Typ Max 100 - - 4 ° 100 ° ...
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... DSon (m Ω ) 5.0 4.8 4.6 4.4 4 (V) DS Fig 7. 003aag608 ( (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 December 2011 PSMN013-100XS Min Typ = 25 ° 109 Drain-source on-state resistance as a function of gate-source voltage; typical values 80 ...
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... Fig 11. Sub-threshold drain current as a function of 003aag611 a 5.5 6 100 120 I (A) D Fig 13. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 December 2011 PSMN013-100XS −1 min typ −2 −3 −4 −5 − gate-source voltage 3 2 ...
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... Fig 15. Gate-source voltage as a function of gate 003aag613 (pF) C iss C oss C rss (V) DS Fig 17. Input and reverse transfer capacitances as a All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 December 2011 PSMN013-100XS (V) 80V 50V V = 20V charge ...
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... N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A) 120 I S (A) 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 December 2011 PSMN013-100XS 003aag614 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2011. All rights reserved ...
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... scale 0.7 15.8 6.5 10.3 2.7 2.54 5.08 0.4 15.2 6.3 9.7 1.7 REFERENCES JEDEC JEITA 3-lead TO-220F All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 December 2011 PSMN013-100XS mounting base ( max. 0.6 14.4 3.30 3.2 2.6 3 0.4 13.5 2.79 3.0 2.3 EUROPEAN PROJECTION SOT186A ...
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... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN013-100XS v.1 20111213 PSMN013-100XS Preliminary data sheet N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A) Data sheet status Change notice Preliminary data sheet - All information provided in this document is subject to legal disclaimers. ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 December 2011 PSMN013-100XS © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 December 2011 PSMN013-100XS © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PSMN013-100XS All rights reserved. Date of release: 13 December 2011 Document identifier: PSMN013-100XS ...