PSMN013-100BS,118 NXP Semiconductors, PSMN013-100BS,118 Datasheet

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PSMN013-100BS,118

Manufacturer Part Number
PSMN013-100BS,118
Description
MOSFET Std N-chanMOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN013-100BS118.pdf (13 pages)

Specifications of PSMN013-100BS,118

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
68 A
Resistance Drain-source Rds (on)
13.9 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Power Dissipation
170 W
Factory Pack Quantity
800
Scan or click this QR code to view the latest information for this product
1. Product profile
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
D
j
DS
tot
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
•
•
•
•
•
•
PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
4 October 2012
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive
DC-to-DC converters
Load switching
Motor control
Server power supplies
Conditions
T
T
T
V
Fig.
V
Fig. 13
V
Fig.
V
Fig.
j
mb
mb
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C; V
= 25 °C;
12;
15;
14;
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
Fig. 13
Fig. 14
Fig. 15
j
D
D
D
D
Fig. 2
≤ 175 °C
GS
= 15 A; T
= 15 A; T
= 25 A; V
= 25 A; V
= 10 V;
j
j
DS
DS
= 100 °C;
= 25 °C;
Fig. 1
= 50 V;
= 50 V;
[1]
Min
-
-
-
-55
-
-
-
-
Product data sheet
Typ
-
-
-
-
19.4
10.8
17
59
Max
100
68
170
175
25
13.9
23.8
83
Unit
V
A
W
°C
mΩ
mΩ
nC
nC

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PSMN013-100BS,118 Summary of contents

Page 1

... PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK 4 October 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • ...

Page 2

... Marking code PSMN013-100BS Conditions T ≥ 25 °C; T ≤ 175 ° ≤ 175 °C; T ≥ 25 ° All information provided in this document is subject to legal disclaimers. 4 October 2012 PSMN013-100BS Min Typ Max - - 127 Graphic symbol mbb076 Version SOT404 Min Max ...

Page 3

... V; unclamped; R sup 003aac512 120 P der (%) 150 200 T (°C) mb Fig. 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 4 October 2012 PSMN013-100BS Min -20 Fig [1] Fig [ °C; Fig - ° ...

Page 4

... Product data sheet N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Conditions Fig. 4 minimum footprint; mounted on a printed-circuit board - All information provided in this document is subject to legal disclaimers. 4 October 2012 PSMN013-100BS t =10 µs p 100 µ 100 Min Typ - ...

Page 5

... Fig. 15; Fig Fig. 15; Fig MHz °C; Fig All information provided in this document is subject to legal disclaimers. 4 October 2012 PSMN013-100BS Min Typ Max Unit 100 - - 4.6 ...

Page 6

... V DS 003a a d577 5000 (pF) 4000 5.5 3000 5 2000 4 1000 (V) DS Fig. 6. All information provided in this document is subject to legal disclaimers. 4 October 2012 PSMN013-100BS Min Typ - 136 - 20 52 Fig 0. 109 Input and reverse transfer capacitances as a function of gate-source voltage ...

Page 7

... GS Fig. 8. 003a a d582 V GS(th) (V) 25 ° (V) GS Fig. 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. 4 October 2012 PSMN013-100BS Forward transconductance as a function of drain current; typical values 5 4 max 3 typ ...

Page 8

... V (V) GS Fig. 12. Normalized drain-source on-state resistance 003aad578 (A) D Fig. 14. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. 4 October 2012 PSMN013-100BS 3.2 a 2.4 1.6 0 factor as a function of junction temperature ( 50V ...

Page 9

... Fig. 16. Input, output and reverse transfer capacitances 100 175 ° 0.6 All information provided in this document is subject to legal disclaimers. 4 October 2012 PSMN013-100BS (pF function of drain-source voltage; typical values 003a a d584 25 ° ...

Page 10

... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. 4 October 2012 PSMN013-100BS mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved ...

Page 11

... NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 4 October 2012 PSMN013-100BS © NXP B.V. 2012. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PSMN013-100BS Product data sheet N-channel 100V 13.9mΩ standard level MOSFET in D2PAK All information provided in this document is subject to legal disclaimers. 4 October 2012 PSMN013-100BS © NXP B.V. 2012. All rights reserved ...

Page 13

... For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 October 2012 PSMN013-100BS Product data sheet N-channel 100V 13.9mΩ standard level MOSFET in D2PAK All information provided in this document is subject to legal disclaimers. 4 October 2012 PSMN013-100BS © NXP B.V. 2012. All rights reserved ...

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