BLF7G22L-250P NXP Semiconductors, BLF7G22L-250P Datasheet - Page 5

• Manufacturer Part Number: BLF7G22L-250P
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-250P_22LS-250P
Product data sheet
Fig 2.
(dB)
G
p
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
19.0
18.5
18.0
17.5
17.0
16.5
16.0
0
V
Power gain as a function of average load
power; typical values
DS
= 28 V; I
50
(3)
(2)
(1)
7.3 1 Tone CW
100
Dq
= 1900 mA.
150
200
250
BLF7G22L-250P; BLF7G22LS-250P
P
All information provided in this document is subject to legal disclaimers.
L(AV)
aaa-001318
300
(W)
350
Rev. 2 — 28 October 2011
Fig 3.
(%)
η
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
D
60
50
40
30
20
10
0
V
Drain efficiency as a function of average load
power; typical values
DS
= 28 V; I
50
100
Dq
= 1900 mA.
150
(3)
(2)
(1)
200
Power LDMOS transistor
250
P
© NXP B.V. 2011. All rights reserved.
L(AV)
aaa-001319
300
(W)
350
5 of 14