BLF7G22L-250P NXP Semiconductors, BLF7G22L-250P Datasheet - Page 6

• Manufacturer Part Number: BLF7G22L-250P
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-250P_22LS-250P
Product data sheet
Fig 4.
Fig 6.
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
p
19
18
17
16
15
14
0
V
at 0.01  probability on the CCDF.
Power gain and drain efficiency as functions
of average load power; typical values
V
Adjacent power channel ratio (5 MHZ) as function of average load power; typical values
DS
DS
= 28 V; I
= 28 V; I
G
7.4 1-carrier W-CDMA
η
p
D
40
Dq
Dq
= 1900 mA; f = 2140 MHz; PAR = 7.2 dB
= 1900 mA; PAR = 7.2 dB at 0.01  probability on the CCDF.
80
APCR
(dBc)
-25
-35
-45
-55
5M
120
BLF7G22L-250P; BLF7G22LS-250P
P
0
All information provided in this document is subject to legal disclaimers.
L(AV)
aaa-001320
(W)
160
Rev. 2 — 28 October 2011
40
50
40
30
20
10
0
(%)
η
D
(3)
(2)
(1)
80
Fig 5.
PAR
(dB)
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
120
8
7
6
5
4
0
P
V
probability on the CCDF.
Peak-to-average power ratio as function of
peak power; typical values
L(AV)
DS
aaa-001322
= 28 V; I
(W)
160
40
Dq
= 1900 mA; PAR = 7.2 dB at 0.01 
80
(3)
(2)
(1)
Power LDMOS transistor
120
© NXP B.V. 2011. All rights reserved.
P
aaa-001321
L(M)
(W)
160
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