AP0603GH-HF Advanced Power Electronics Corp., AP0603GH-HF Datasheet - Page 3

• Manufacturer Part Number: AP0603GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP0603GH-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 6
• Rds(on) / Max(m?) Vgs@4.5v: 11
• Qg (nc): 10
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 72
• Pd(w): 50
• Configuration: Single N
• Package: TO-252

200
160
120
12
10
30
20
10
80
40
8
6
4
0
0
0.0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
V
o
Reverse Diode
1.0
V
DS
C
V
GS
4
, Drain-to-Source Voltage (V)
SD
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
T
0.4
j
=150
2.0
o
C
6
I
T
D
3.0
C
=30A
=25
0.8
o
C
8
T
V
4.0
j
G
=25
= 4.0 V
7.0 V
5.0 V
6.0V
10V
o
C
5.0
1.2
10
100
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
80
60
40
20
0
0.0
Fig 4. Normalized On-Resistance
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=40A
=10V
1.0
v.s. Junction Temperature
Junction Temperature
V
T
DS
j
T
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
2.0
T
C
3.0
=150
50
50
AP0603GH-HF
o
C
4.0
o
100
100
V
C)
G
o
C)
=4.0V
5.0
7 .0V
6.0V
5.0 V
10V
6.0
150
150
3