AP0603GH-HF Advanced Power Electronics Corp., AP0603GH-HF Datasheet - Page 4

• Manufacturer Part Number: AP0603GH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP0603GH-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 6
• Rds(on) / Max(m?) Vgs@4.5v: 11
• Qg (nc): 10
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 72
• Pd(w): 50
• Configuration: Single N
• Package: TO-252

AP0603GH-HF
1000
100
10
1
8
6
4
2
0
0.1
Fig 11. Switching Time Waveform
0
Fig 9. Maximum Safe Operating Area
Fig 7. Gate Charge Characteristics
90%
Single Pulse
I
T
10%
V
V
D
C
DS
=30A
GS
=25
V
DS
V
o
Q
C
V
DS
,Drain-to-Source Voltage (V)
4
t
G
V
d(on)
DS
=15V
, Total Gate Charge (nC)
DS
=18V
1
=24V
t
r
8
10
t
d(off)
12
t
f
100ms
100us
10ms
1ms
DC
16
100
Fig 10. Effective Transient Thermal Impedance
1600
1200
800
400
0.01
0.1
0
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.02
0.05
0.01
0.1
Duty factor = 0.5
Single Pulse
V
0.2
G
5
0.0001
Q
V
GS
DS
9
0.001
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
Charge
G
GD
0.01
17
0.1
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
DM
T
x R
1
f=1.0MHz
thjc
25
+ T
C
C
C
Q
C
iss
oss
rss
10
29
4